Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

Vladimir Neplokh; Vladimir Fedorov; Alexey Mozharov; Fedor Kochetkov; Konstantin Shugurov; Eduard Moiseev; Nuño Amador-Mendez; Tatiana Statsenko; Sofia Morozova; Dmitry Krasnikov; Albert G Nasibulin; Regina Islamova; George Cirlin; Maria Tchernycheva; Ivan Mukhin

doi:10.3390/nano11102549

Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

Nanomaterials (Basel). 2021 Sep 29;11(10):2549. doi: 10.3390/nano11102549.

Authors

Vladimir Neplokh^{1

2}, Vladimir Fedorov^{1

2}, Alexey Mozharov², Fedor Kochetkov², Konstantin Shugurov², Eduard Moiseev^{2

3}, Nuño Amador-Mendez⁴, Tatiana Statsenko^{5

6}, Sofia Morozova^{5

6}, Dmitry Krasnikov⁷, Albert G Nasibulin^{7

8}, Regina Islamova⁹, George Cirlin², Maria Tchernycheva⁴, Ivan Mukhin^{1

2}

Affiliations

¹ High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia.
² Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia.
³ Laboratory of Quantum Optoelectronics, National Research University Higher School of Economics, Kantemirovskaya 3A, 194100 St. Petersburg, Russia.
⁴ Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France.
⁵ Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia.
⁶ N.E. Bauman Moscow State Technical University, 2nd Baumanskaya str. 5/1, 105005 Moscow, Russia.
⁷ Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30/1, 121205 Moscow, Russia.
⁸ Department of Chemistry and Materials Science, Aalto University, FI-00076 Espoo, Finland.
⁹ Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia.

Abstract

We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices.

Keywords: GaPAs; flexible LED; molecular beam epitaxy; nanowires; single-walled carbon nanotubes.

Abstract

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