We predict the frequency-dependent bulk quadrupole contribution to second harmonic generation in silicon quantitatively from the linear susceptibility by means of a generalized classical anharmonic oscillator model and the simplified bond hyperpolarizability model. We show that in single-beam setups the main contribution is found for the silicon (111) surface, and only a minor contribution for the (001) and (011) facets. The dipole contribution obtained from our model is compared to literature values for SiC, AlAs and GaAs to demonstrate the viability of the method.