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Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers.
Materials (Basel). 2020 Oct 28;13(21):4818. doi: 10.3390/ma13214818.
Materials (Basel). 2020.
PMID: 33126653
Free PMC article.
Nondestructive measurements of depth distribution of carrier lifetimes in 4H-SiC thick epitaxial layers using time-resolved free carrier absorption with intersectional lights.
Hirayama T, Nagaya K, Miyasaka A, Kojima K, Kato T, Okumura H, Kato M.
Hirayama T, et al. Among authors: kojima k.
Rev Sci Instrum. 2020 Dec 1;91(12):123902. doi: 10.1063/5.0018080.
Rev Sci Instrum. 2020.
PMID: 33379997
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Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle.
Masumoto K, Asamizu H, Tamura K, Kudou C, Nishio J, Kojima K, Ohno T, Okumura H.
Masumoto K, et al. Among authors: kojima k.
Materials (Basel). 2014 Oct 17;7(10):7010-7021. doi: 10.3390/ma7107010.
Materials (Basel). 2014.
PMID: 28788228
Free PMC article.
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