Search Page
Save citations to file
Email citations
Send citations to clipboard
Add to Collections
Add to My Bibliography
Create a file for external citation management software
Your saved search
Your RSS Feed
Filters
Results by year
Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
---|---|
2020 | 1 |
2021 | 2 |
2024 | 0 |
Search Results
3 results
Results by year
Filters applied: . Clear all
It looks like you are searching for an author.
Results are currently sorted by Best Match. To see the newest results first,
change the sort order to Most Recent.
Page 1
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.
Materials (Basel). 2021 Apr 29;14(9):2316. doi: 10.3390/ma14092316.
Materials (Basel). 2021.
PMID: 33946943
Free PMC article.
Review.
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability.
Mukherjee K, De Santi C, Borga M, You S, Geens K, Bakeroot B, Decoutere S, Meneghesso G, Zanoni E, Meneghini M.
Mukherjee K, et al.
Materials (Basel). 2020 Oct 23;13(21):4740. doi: 10.3390/ma13214740.
Materials (Basel). 2020.
PMID: 33114060
Free PMC article.
Item in Clipboard
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n-n Diodes: The Road to Reliable Vertical MOSFETs.
Mukherjee K, De Santi C, Buffolo M, Borga M, You S, Geens K, Bakeroot B, Decoutere S, Gerosa A, Meneghesso G, Zanoni E, Meneghini M.
Mukherjee K, et al.
Micromachines (Basel). 2021 Apr 16;12(4):445. doi: 10.3390/mi12040445.
Micromachines (Basel). 2021.
PMID: 33923422
Free PMC article.
Item in Clipboard
Cite
Cite