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Atomic-scale diffusion rates during growth of thin metal films on weakly-interacting substrates.
Sci Rep. 2019 Apr 29;9(1):6640. doi: 10.1038/s41598-019-43107-8.
Sci Rep. 2019.
PMID: 31036908
Free PMC article.
Films are deposited by magnetron sputtering, at temperatures T(S) between 298 and 413 K, and vapor arrival rates F in the range 0.08 to 5.38 monolayers/s. ...
Films are deposited by magnetron sputtering, at temperatures T(S) between 298 and 413 K, and vapor arrival rates F in the range 0.08 …
Semi-Empirical Force-Field Model for the Ti1-xAlxN (0 ≤ x ≤ 1) System.
Almyras GA, Sangiovanni DG, Sarakinos K.
Almyras GA, et al.
Materials (Basel). 2019 Jan 10;12(2):215. doi: 10.3390/ma12020215.
Materials (Basel). 2019.
PMID: 30634593
Free PMC article.
The MEAM parameters, determined via an adaptive simulated-annealing (ASA) minimization scheme, optimize the model's predictions with respect to 0 K equilibrium volumes, elastic constants, cohesive energies, enthalpies of mixing, and point-defect formation energies, for a s …
The MEAM parameters, determined via an adaptive simulated-annealing (ASA) minimization scheme, optimize the model's predictions with respect …
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