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Atomic-scale diffusion rates during growth of thin metal films on weakly-interacting substrates.
Jamnig A, Sangiovanni DG, Abadias G, Sarakinos K. Jamnig A, et al. Sci Rep. 2019 Apr 29;9(1):6640. doi: 10.1038/s41598-019-43107-8. Sci Rep. 2019. PMID: 31036908 Free PMC article.
Films are deposited by magnetron sputtering, at temperatures T(S) between 298 and 413 K, and vapor arrival rates F in the range 0.08 to 5.38 monolayers/s. ...
Films are deposited by magnetron sputtering, at temperatures T(S) between 298 and 413 K, and vapor arrival rates F in the range 0.08 …
Semi-Empirical Force-Field Model for the Ti1-xAlxN  (0 ≤ x ≤ 1) System.
Almyras GA, Sangiovanni DG, Sarakinos K. Almyras GA, et al. Materials (Basel). 2019 Jan 10;12(2):215. doi: 10.3390/ma12020215. Materials (Basel). 2019. PMID: 30634593 Free PMC article.
The MEAM parameters, determined via an adaptive simulated-annealing (ASA) minimization scheme, optimize the model's predictions with respect to 0 K equilibrium volumes, elastic constants, cohesive energies, enthalpies of mixing, and point-defect formation energies, for a s …
The MEAM parameters, determined via an adaptive simulated-annealing (ASA) minimization scheme, optimize the model's predictions with respect …