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Page 1
Intensive measures of luminescence in GaN/InGaN heterostructures.
PLoS One. 2019 Sep 24;14(9):e0222928. doi: 10.1371/journal.pone.0222928. eCollection 2019.
PLoS One. 2019.
PMID: 31550270
Free PMC article.
Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes.
Nee TE, Wang JC, Zhong BY, Hsiao JJ, Wu YF.
Nee TE, et al. Among authors: hsiao jj.
Nanomaterials (Basel). 2021 May 30;11(6):1449. doi: 10.3390/nano11061449.
Nanomaterials (Basel). 2021.
PMID: 34070771
Free PMC article.
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