Binary Addition in Resistance Switching Memory Array by Sensing Majority

Micromachines (Basel). 2020 May 14;11(5):496. doi: 10.3390/mi11050496.

Abstract

The flow of data between processing and memory units in contemporary computing systems is their main performance and energy-efficiency bottleneck, often referred to as the 'von Neumann bottleneck' or 'memory wall'. Emerging resistance switching memories (memristors) show promising signs to overcome the 'memory wall' by enabling computation in the memory array. Majority logic is a type of Boolean logic, and in many nanotechnologies, it has been found to be an efficient logic primitive. In this paper, a technique is proposed to implement a majority gate in a memory array. The majority gate is realised in an energy-efficient manner as a memory R E A D operation. The proposed logic family disintegrates arithmetic operations to majority and NOT operations which are implemented as memory R E A D and W R I T E operations. A 1-bit full adder can be implemented in 6 steps (memory cycles) in a 1T-1R array, which is faster than I M P L Y , N A N D , N O R and other similar logic primitives.

Keywords: Boolean logic; Sense Amplifier; adder; in-memory computing; majority logic; memristor; non-volatile memory (NVM); resistance switching memory.