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2019 | 1 |
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Kinase detection with gallium nitride based high electron mobility transistors.
Appl Phys Lett. 2013 Jul 1;103(1):13701. doi: 10.1063/1.4812987.
Appl Phys Lett. 2013.
PMID: 23918992
Free PMC article.
Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE.
Ciarkowski T, Allen N, Carlson E, McCarthy R, Youtsey C, Wang J, Fay P, Xie J, Guido L.
Ciarkowski T, et al. Among authors: xie j.
Materials (Basel). 2019 Aug 1;12(15):2455. doi: 10.3390/ma12152455.
Materials (Basel). 2019.
PMID: 31374963
Free PMC article.
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Erratum: "Kinase detection with gallium nitride based high electron mobility transistors" [Appl. Phys. Lett. 103, 013701 (2013)].
Makowski MS, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A.
Makowski MS, et al. Among authors: xie j.
Appl Phys Lett. 2013 Aug 19;103(8):89902. doi: 10.1063/1.4819200. Epub 2013 Aug 23.
Appl Phys Lett. 2013.
PMID: 24046484
Free PMC article.
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