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Page 1
Miniaturization of CMOS.
Radamson HH, He X, Zhang Q, Liu J, Cui H, Xiang J, Kong Z, Xiong W, Li J, Gao J, Yang H, Gu S, Zhao X, Du Y, Yu J, Wang G. Radamson HH, et al. Among authors: xiang j. Micromachines (Basel). 2019 Apr 30;10(5):293. doi: 10.3390/mi10050293. Micromachines (Basel). 2019. PMID: 31052223 Free PMC article. Review.
State of the Art and Future Perspectives in Advanced CMOS Technology.
Radamson HH, Zhu H, Wu Z, He X, Lin H, Liu J, Xiang J, Kong Z, Xiong W, Li J, Cui H, Gao J, Yang H, Du Y, Xu B, Li B, Zhao X, Yu J, Dong Y, Wang G. Radamson HH, et al. Among authors: xiang j. Nanomaterials (Basel). 2020 Aug 7;10(8):1555. doi: 10.3390/nano10081555. Nanomaterials (Basel). 2020. PMID: 32784801 Free PMC article. Review.
A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors.
Zhang Z, Luo Y, Cui Y, Yang H, Zhang Q, Xu G, Wu Z, Xiang J, Liu Q, Yin H, Mao S, Wang X, Li J, Zhang Y, Luo Q, Gao J, Xiong W, Liu J, Li Y, Li J, Luo J, Wang W. Zhang Z, et al. Among authors: xiang j. ACS Appl Mater Interfaces. 2022 Feb 9;14(5):6967-6976. doi: 10.1021/acsami.1c20189. Epub 2022 Jan 25. ACS Appl Mater Interfaces. 2022. PMID: 35076195
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.
Li J, Li Y, Zhou N, Xiong W, Wang G, Zhang Q, Du A, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Cao Z, Yang T, Li J, Yin H, Zhu H, Luo J, Wang W, Radamson HH. Li J, et al. Among authors: xiang j. Nanomaterials (Basel). 2020 Apr 20;10(4):793. doi: 10.3390/nano10040793. Nanomaterials (Basel). 2020. PMID: 32326106 Free PMC article.
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.
Zhang Q, Gu J, Xu R, Cao L, Li J, Wu Z, Wang G, Yao J, Zhang Z, Xiang J, He X, Kong Z, Yang H, Tian J, Xu G, Mao S, Radamson HH, Yin H, Luo J. Zhang Q, et al. Among authors: xiang j. Nanomaterials (Basel). 2021 Mar 5;11(3):646. doi: 10.3390/nano11030646. Nanomaterials (Basel). 2021. PMID: 33808024 Free PMC article.
A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.
Li J, Li Y, Zhou N, Wang G, Zhang Q, Du A, Zhang Y, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Li Y, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Yang T, Li J, Yin H, Zhu H, Wang W, Radamson HH. Li J, et al. Among authors: xiang j. Materials (Basel). 2020 Feb 7;13(3):771. doi: 10.3390/ma13030771. Materials (Basel). 2020. PMID: 32046197 Free PMC article.
Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance.
Xie L, Zhu H, Zhang Y, Ai X, Li J, Wang G, Liu J, Du A, Yang H, Yin X, Huang W, Li C, Li Y, Wang Q, Lu S, Kong Z, Xiang J, Du Y, Luo J, Li J, Radamson HH, Wang W, Ye T. Xie L, et al. Among authors: xiang j. ACS Nano. 2023 Nov 28;17(22):22259-22267. doi: 10.1021/acsnano.3c02518. Epub 2023 Oct 12. ACS Nano. 2023. PMID: 37823534