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2013 | 2 |
2014 | 1 |
2016 | 1 |
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Page 1
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
Nanoscale Res Lett. 2014 Jan 29;9(1):52. doi: 10.1186/1556-276X-9-52.
Nanoscale Res Lett. 2014.
PMID: 24475979
Free PMC article.
Low Cost Local Contact Opening by Using Polystyrene Spheres Spin-Coating Method for PERC Solar Cells.
Hsu CH, Yang CH, Wang YH, Huang CW, Lien SY, Kung CY, Lou JC.
Hsu CH, et al. Among authors: lou jc.
Materials (Basel). 2016 Jul 8;9(7):549. doi: 10.3390/ma9070549.
Materials (Basel). 2016.
PMID: 28773674
Free PMC article.
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High performance of graphene oxide-doped silicon oxide-based resistance random access memory.
Zhang R, Chang KC, Chang TC, Tsai TM, Chen KH, Lou JC, Chen JH, Young TF, Shih CC, Yang YL, Pan YC, Chu TJ, Huang SY, Pan CH, Su YT, Syu YE, Sze SM.
Zhang R, et al. Among authors: lou jc.
Nanoscale Res Lett. 2013 Nov 21;8(1):497. doi: 10.1186/1556-276X-8-497.
Nanoscale Res Lett. 2013.
PMID: 24261454
Free PMC article.
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Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer.
Chang KC, Huang JW, Chang TC, Tsai TM, Chen KH, Young TF, Chen JH, Zhang R, Lou JC, Huang SY, Pan YC, Huang HC, Syu YE, Gan DS, Bao DH, Sze SM.
Chang KC, et al. Among authors: lou jc.
Nanoscale Res Lett. 2013 Dec 11;8(1):523. doi: 10.1186/1556-276X-8-523.
Nanoscale Res Lett. 2013.
PMID: 24330524
Free PMC article.
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