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Year | Number of Results |
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2019 | 2 |
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Page 1
Highly Reproducible Heterosynaptic Plasticity Enabled by MoS2/ZrO2-x Heterostructure Memtransistor.
ACS Appl Mater Interfaces. 2022 Nov 23;14(46):52173-52181. doi: 10.1021/acsami.2c15497. Epub 2022 Nov 11.
ACS Appl Mater Interfaces. 2022.
PMID: 36368778
One-step H2S reactive sputtering for 2D MoS2/Si heterojunction photodetector.
Jang HY, Nam JH, Yoon J, Kim Y, Park W, Cho B.
Jang HY, et al. Among authors: nam jh.
Nanotechnology. 2020 May 29;31(22):225205. doi: 10.1088/1361-6528/ab7606. Epub 2020 Feb 13.
Nanotechnology. 2020.
PMID: 32053801
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Artificial 2D van der Waals Synapse Devices via Interfacial Engineering for Neuromorphic Systems.
Park W, Jang HY, Nam JH, Kwon JD, Cho B, Kim Y.
Park W, et al. Among authors: nam jh.
Nanomaterials (Basel). 2020 Jan 2;10(1):88. doi: 10.3390/nano10010088.
Nanomaterials (Basel). 2020.
PMID: 31906481
Free PMC article.
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Improvement of the Bias Stress Stability in 2D MoS2 and WS2 Transistors with a TiO2 Interfacial Layer.
Park W, Pak Y, Jang HY, Nam JH, Kim TH, Oh S, Choi SM, Kim Y, Cho B.
Park W, et al. Among authors: nam jh.
Nanomaterials (Basel). 2019 Aug 12;9(8):1155. doi: 10.3390/nano9081155.
Nanomaterials (Basel). 2019.
PMID: 31409001
Free PMC article.
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Facile Fabrication of a Two-Dimensional TMD/Si Heterojunction Photodiode by Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition.
Kim Y, Kwon S, Seo EJ, Nam JH, Jang HY, Kwon SH, Kwon JD, Kim DW, Cho B.
Kim Y, et al. Among authors: nam jh.
ACS Appl Mater Interfaces. 2018 Oct 24;10(42):36136-36143. doi: 10.1021/acsami.8b12896. Epub 2018 Oct 11.
ACS Appl Mater Interfaces. 2018.
PMID: 30261138
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Facile fabrication of ZnO nanowire memory device based on chemically-treated surface defects.
Park W, Kim TH, Nam JH, Jang HY, Pak Y, Min JW, Yun J, Cho B.
Park W, et al. Among authors: nam jh.
Nanotechnology. 2019 Apr 12;30(15):155201. doi: 10.1088/1361-6528/aaff74. Epub 2019 Jan 17.
Nanotechnology. 2019.
PMID: 30654335
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