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Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes.
Materials (Basel). 2011 Dec 6;4(12):2092-2107. doi: 10.3390/ma4122092.
Materials (Basel). 2011.
PMID: 28824126
Free PMC article.
Study of the effect of Sn grain boundaries on IMC morphology in solid state inter-diffusion soldering.
Hou L, Moelans N, Derakhshandeh J, De Wolf I, Beyne E.
Hou L, et al. Among authors: derakhshandeh j.
Sci Rep. 2019 Oct 16;9(1):14862. doi: 10.1038/s41598-019-51179-9.
Sci Rep. 2019.
PMID: 31619710
Free PMC article.
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