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2019 | 2 |
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Page 1
Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memory.
Nanoscale Res Lett. 2022 Feb 23;17(1):28. doi: 10.1186/s11671-022-03667-7.
Nanoscale Res Lett. 2022.
PMID: 35195806
Free PMC article.
Breakdown Voltage Enhancement in AlGaN/GaN High-Electron Mobility Transistor by Optimizing Gate Field-Plate Structure.
Park YJ, Kwak HT, Chang SB, Kim HS.
Park YJ, et al. Among authors: kwak ht.
J Nanosci Nanotechnol. 2019 Apr 1;19(4):2298-2301. doi: 10.1166/jnn.2019.15991.
J Nanosci Nanotechnol. 2019.
PMID: 30486986
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DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure.
Kwak HT, Jang KW, Kim HJ, Lee SH, Lim JW, Kim HS.
Kwak HT, et al.
J Nanosci Nanotechnol. 2019 Apr 1;19(4):2319-2322. doi: 10.1166/jnn.2019.16004.
J Nanosci Nanotechnol. 2019.
PMID: 30486991
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Enhanced near-infrared photodetection via whispering gallery modes in the wave-shaped sidewall silicon nanopillar arrays.
Choi M, Kwak HT, Kim H, Yoo H, Park JH, Baek CK.
Choi M, et al. Among authors: kwak ht.
Opt Express. 2023 Nov 6;31(23):38013-38023. doi: 10.1364/OE.503871.
Opt Express. 2023.
PMID: 38017919
Free article.
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Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.
Kwak HT, Chang SB, Jung HG, Kim HS.
Kwak HT, et al.
J Nanosci Nanotechnol. 2018 Sep 1;18(9):5860-5867. doi: 10.1166/jnn.2018.15572.
J Nanosci Nanotechnol. 2018.
PMID: 29677707
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