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Page 1
Integrated microHall magnetometer to measure the magnetic properties of nanoparticles.
Lab Chip. 2017 Nov 21;17(23):4000-4007. doi: 10.1039/c7lc00934h.
Lab Chip. 2017.
PMID: 29067383
Free PMC article.
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator.
Chang SJ, Kim DS, Kim TW, Bae Y, Jung HW, Choi IG, Noh YS, Lee SH, Kim SI, Ahn HK, Kang DM, Lim JW.
Chang SJ, et al. Among authors: ahn hk.
Nanomaterials (Basel). 2023 Feb 27;13(5):898. doi: 10.3390/nano13050898.
Nanomaterials (Basel). 2023.
PMID: 36903774
Free PMC article.
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Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications.
Moon S, Chang SJ, Kim Y, Okello OFN, Kim J, Kim J, Jung HW, Ahn HK, Kim DS, Choi SY, Lee J, Lim JW, Kim JK.
Moon S, et al. Among authors: ahn hk.
ACS Appl Mater Interfaces. 2021 Dec 15;13(49):59440-59449. doi: 10.1021/acsami.1c15970. Epub 2021 Nov 18.
ACS Appl Mater Interfaces. 2021.
PMID: 34792331
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Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer.
Chang SJ, Kim DS, Kim TW, Lee JH, Bae Y, Jung HW, Kang SC, Kim H, Noh YS, Lee SH, Kim SI, Ahn HK, Lim JW.
Chang SJ, et al. Among authors: ahn hk.
Nanomaterials (Basel). 2020 Oct 30;10(11):2175. doi: 10.3390/nano10112175.
Nanomaterials (Basel). 2020.
PMID: 33143313
Free PMC article.
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Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors.
Kang SC, Jung HW, Chang SJ, Kim SM, Lee SK, Lee BH, Kim H, Noh YS, Lee SH, Kim SI, Ahn HK, Lim JW.
Kang SC, et al. Among authors: ahn hk.
Nanomaterials (Basel). 2020 Oct 24;10(11):2116. doi: 10.3390/nano10112116.
Nanomaterials (Basel). 2020.
PMID: 33114425
Free PMC article.
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