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Page 1
Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle.
Materials (Basel). 2014 Oct 17;7(10):7010-7021. doi: 10.3390/ma7107010.
Materials (Basel). 2014.
PMID: 28788228
Free PMC article.
Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes.
Masui H, Fellows NN, Sato H, Asamizu H, Nakamura S, DenBaars SP.
Masui H, et al. Among authors: asamizu h.
Appl Opt. 2007 Aug 10;46(23):5974-8. doi: 10.1364/ao.46.005974.
Appl Opt. 2007.
PMID: 17694152
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