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Page 1
Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II.
Micromachines (Basel). 2022 Mar 1;13(3):403. doi: 10.3390/mi13030403.
Micromachines (Basel). 2022.
PMID: 35334695
Free PMC article.
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications.
Zagni N, Verzellesi G, Chini A.
Zagni N, et al. Among authors: verzellesi g.
Micromachines (Basel). 2022 Dec 17;13(12):2244. doi: 10.3390/mi13122244.
Micromachines (Basel). 2022.
PMID: 36557543
Free PMC article.
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High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices.
Peverini F, Bizzarri M, Boscardin M, Calcagnile L, Caprai M, Caricato AP, Cirrone GAP, Crivellari M, Cuttone G, Dunand S, Fanò L, Gianfelici B, Hammad O, Ionica M, Kanxheri K, Large M, Maruccio G, Menichelli M, Monteduro AG, Moscatelli F, Morozzi A, Pallotta S, Papi A, Passeri D, Petasecca M, Petringa G, Pis I, Quarta G, Rizzato S, Rossi A, Rossi G, Scorzoni A, Soncini C, Servoli L, Tacchi S, Talamonti C, Verzellesi G, Wyrsch N, Zema N, Pedio M.
Peverini F, et al. Among authors: verzellesi g.
Nanomaterials (Basel). 2022 Oct 4;12(19):3466. doi: 10.3390/nano12193466.
Nanomaterials (Basel). 2022.
PMID: 36234601
Free PMC article.
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On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs.
Zagni N, Chini A, Puglisi FM, Pavan P, Verzellesi G.
Zagni N, et al. Among authors: verzellesi g.
Micromachines (Basel). 2021 Jun 16;12(6):709. doi: 10.3390/mi12060709.
Micromachines (Basel). 2021.
PMID: 34208780
Free PMC article.
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