Gilho Kim - Search Results

Year	Number of Results
2008	1
2009	1
2010	1
2011	3
2012	3
2013	1
2014	5
2015	6
2016	4
2017	7
2018	5
2019	1
2020	1
2021	4
2022	2
2023	3
2024	0

1

Doping-Free High-Performance Photovoltaic Effect in a WSe₂ Lateral p-n Homojunction Formed by Contact Engineering.

Le Thi HY, Ngo TD, Phan NAN, Shin H, Uddin I, Venkatesan A, Liang CT, Aoki N, Yoo WJ, Watanabe K, Taniguchi T, Kim GH. Le Thi HY, et al. ACS Appl Mater Interfaces. 2023 Jul 26;15(29):35342-35349. doi: 10.1021/acsami.3c05451. Epub 2023 Jul 13. ACS Appl Mater Interfaces. 2023. PMID: 37442799

2

Self-Forming p-n Junction Diode Realized with WSe₂ Surface and Edge Dual Contacts.

Le Thi HY, Ngo TD, Phan NAN, Yoo WJ, Watanabe K, Taniguchi T, Aoki N, Bird JP, Kim GH. Le Thi HY, et al. Small. 2022 Nov;18(46):e2204547. doi: 10.1002/smll.202204547. Epub 2022 Oct 10. Small. 2022. PMID: 36216594

3

Enhanced Performance of WS₂ Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts.

Phan NAN, Noh H, Kim J, Kim Y, Kim H, Whang D, Aoki N, Watanabe K, Taniguchi T, Kim GH. Phan NAN, et al. Small. 2022 Apr;18(13):e2105753. doi: 10.1002/smll.202105753. Epub 2022 Feb 3. Small. 2022. PMID: 35112797

4

High-performance ambipolar MoS₂transistor enabled by indium edge contacts.

Le Thi HY, Khan MA, Venkatesan A, Watanabe K, Taniguchi T, Kim GH. Le Thi HY, et al. Nanotechnology. 2021 Mar 2;32(21). doi: 10.1088/1361-6528/abe438. Nanotechnology. 2021. PMID: 33556924

5

Conversion of Charge Carrier Polarity in MoTe₂ Field Effect Transistor via Laser Doping.

Kim H, Uddin I, Watanabe K, Taniguchi T, Whang D, Kim GH. Kim H, et al. Nanomaterials (Basel). 2023 May 22;13(10):1700. doi: 10.3390/nano13101700. Nanomaterials (Basel). 2023. PMID: 37242116 Free PMC article.

6

Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene.

Nathawat J, Mansaray I, Sakanashi K, Wada N, Randle MD, Yin S, He K, Arabchigavkani N, Dixit R, Barut B, Zhao M, Ramamoorthy H, Somphonsane R, Kim GH, Watanabe K, Taniguchi T, Aoki N, Han JE, Bird JP. Nathawat J, et al. Nat Commun. 2023 Mar 17;14(1):1507. doi: 10.1038/s41467-023-37292-4. Nat Commun. 2023. PMID: 36932096 Free PMC article.

7

Photodetector Based on Multilayer SnSe₂ Field Effect Transistor.

Kang M, Rathi S, Lee I, Li L, Khan MA, Lim D, Lee Y, Park J, Pham AT, Duong AT, Cho S, Yun SJ, Kim GH. Kang M, et al. J Nanosci Nanotechnol. 2018 Jun 1;18(6):4243-4247. doi: 10.1166/jnn.2018.15189. J Nanosci Nanotechnol. 2018. PMID: 29442769

8

Scrub Typhus Incidence Modeling with Meteorological Factors in South Korea.

Kwak J, Kim S, Kim G, Singh VP, Hong S, Kim HS. Kwak J, et al. Among authors: kim g. Int J Environ Res Public Health. 2015 Jun 29;12(7):7254-73. doi: 10.3390/ijerph120707254. Int J Environ Res Public Health. 2015. PMID: 26132479 Free PMC article.

9

Nanocrystalline-graphene-tailored hexagonal boron nitride thin films.

Lee KH, Shin HJ, Kumar B, Kim HS, Lee J, Bhatia R, Kim SH, Lee IY, Lee HS, Kim GH, Yoo JB, Choi JY, Kim SW. Lee KH, et al. Angew Chem Int Ed Engl. 2014 Oct 20;53(43):11493-7. doi: 10.1002/anie.201405762. Epub 2014 Sep 9. Angew Chem Int Ed Engl. 2014. PMID: 25204810

10

High mobility field-effect transistors based on MoS₂crystals grown by the flux method.

Patil V, Kim J, Agrawal K, Park T, Yi J, Aoki N, Watanabe K, Taniguchi T, Kim GH. Patil V, et al. Nanotechnology. 2021 May 17;32(32). doi: 10.1088/1361-6528/abf6f1. Nanotechnology. 2021. PMID: 33845468

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