Genquan Han - Search Results

Year	Number of Results
2014	2
2015	2
2016	2
2017	3
2018	2
2019	8
2020	6
2021	6
2022	7
2023	10
2024	3

1

Mechanical Polarization Switching in Hf_0.5Zr_0.5O₂ Thin Film.

Guan Z, Li YK, Zhao YF, Peng Y, Han G, Zhong N, Xiang PH, Chu JH, Duan CG. Guan Z, et al. Among authors: han g. Nano Lett. 2022 Jun 22;22(12):4792-4799. doi: 10.1021/acs.nanolett.2c01066. Epub 2022 May 31. Nano Lett. 2022. PMID: 35639474

2

GaN nanowires prepared by Cu-assisted photoelectron-chemical etching.

Wang Q, Yang W, Gao S, Chen W, Tang X, Zhang H, Liu B, Han G, Huang Y. Wang Q, et al. Among authors: han g. Nanoscale Adv. 2023 Mar 7;5(8):2238-2243. doi: 10.1039/d2na00889k. eCollection 2023 Apr 11. Nanoscale Adv. 2023. PMID: 37056620 Free PMC article.

3

Above-Room-Temperature Strong Ferromagnetism in 2D MnB Nanosheet.

Wang Y, Xu W, Yang D, Zhang Y, Xu Y, Cheng Z, Mi X, Wu Y, Liu Y, Hao Y, Han GQ. Wang Y, et al. ACS Nano. 2023 Dec 12;17(23):24320-24328. doi: 10.1021/acsnano.3c10218. Epub 2023 Nov 27. ACS Nano. 2023. PMID: 38010743

4

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing.

Luo ZD, Zhang S, Liu Y, Zhang D, Gan X, Seidel J, Liu Y, Han G, Alexe M, Hao Y. Luo ZD, et al. Among authors: han g. ACS Nano. 2022 Feb 22;16(2):3362-3372. doi: 10.1021/acsnano.2c00079. Epub 2022 Feb 11. ACS Nano. 2022. PMID: 35147405

5

Tunable asymmetric magnetoresistance in an Fe₃GeTe₂/graphite/Fe₃GeTe₂ lateral spin valve.

Zeng X, Ye G, Yang F, Ye Q, Zhang L, Ma B, Liu Y, Xie M, Liu Y, Wang X, Hao Y, Han G. Zeng X, et al. Among authors: han g. Nanoscale. 2023 Dec 14;15(48):19480-19485. doi: 10.1039/d3nr04069k. Nanoscale. 2023. PMID: 38018435

6

Proximity Effect-Induced Magnetoresistance Enhancement in a Fe₃GeTe₂/NbSe₂/Fe₃GeTe₂ Magnetic Tunnel Junction.

Zeng X, Ye G, Yang F, Ye Q, Zhang L, Ma B, Liu Y, Xie M, Han G, Hao Y, Luo J, Lu X, Liu Y, Wang X. Zeng X, et al. Among authors: han g. ACS Appl Mater Interfaces. 2023 Dec 5. doi: 10.1021/acsami.3c15363. Online ahead of print. ACS Appl Mater Interfaces. 2023. PMID: 38050752

7

Lateral waveguide scanner integration on surface-emitting mid-infrared lasers.

Yao D, Zhang J, Jia Z, Liu Y, Liu S, Han G, Liu F, Hao Y. Yao D, et al. Among authors: han g. Appl Opt. 2022 Apr 1;61(10):2757-2762. doi: 10.1364/AO.448112. Appl Opt. 2022. PMID: 35471350

8

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf_1-xZr_xO₂.

Zhang F, Luo ZD, Yang Q, Zhou J, Wang J, Zhang Z, Fan Q, Peng Y, Wu Z, Liu F, Chen S, He D, Yin H, Han G, Liu Y, Hao Y. Zhang F, et al. Among authors: han g. ACS Appl Mater Interfaces. 2022 Mar 2;14(8):11028-11037. doi: 10.1021/acsami.1c22426. Epub 2022 Feb 8. ACS Appl Mater Interfaces. 2022. PMID: 35133784

9

Ge N-Channel MOSFETs with ZrO₂ Dielectric Achieving Improved Mobility.

Chou L, Liu Y, Xu Y, Peng Y, Liu H, Yu X, Han G, Hao Y. Chou L, et al. Among authors: han g. Nanoscale Res Lett. 2021 Aug 4;16(1):125. doi: 10.1186/s11671-021-03577-0. Nanoscale Res Lett. 2021. PMID: 34347193 Free PMC article.

10

Compact non-volatile ferroelectric electrostatic doping optical memory based on the epsilon-near-zero effect.

Zhang Y, Li L, Xie H, Jiang Z, Li Y, Wang T, Yao D, Liu Y, Han G, Hao Y. Zhang Y, et al. Among authors: han g. Appl Opt. 2023 Feb 1;62(4):950-955. doi: 10.1364/AO.477763. Appl Opt. 2023. PMID: 36821150

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