Polarization Control in Integrated Graphene-Silicon Quantum Photonics Waveguides

Materials (Basel). 2022 Dec 7;15(24):8739. doi: 10.3390/ma15248739.

Abstract

We numerically investigated the use of graphene nanoribbons placed on top of silicon-on-insulator (SOI) strip waveguides for light polarization control in silicon photonic-integrated waveguides. We found that two factors mainly affected the polarization control: the graphene chemical potential and the geometrical parameters of the waveguide, such as the waveguide and nanoribbon widths and distance. We show that the graphene chemical potential influences both TE and TM polarizations almost in the same way, while the waveguide width tapering enables both TE-pass and TM-pass polarizing functionalities. Overall, by increasing the oxide spacer thickness between the silicon waveguide and the top graphene layer, the device insertion losses can be reduced, while preserving a high polarization extinction ratio.

Keywords: polarization control; quantum photonics; silicon-graphene heterostructure.

Grants and funding

This work has been funded by INFN through the CSN5 project Quantep, project Brosynano MICINN-FEDER (PID2019-106820RB-C22) and by the MUR through the program PRIN2017, PRIN PELM (20177PSCKT).