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2011 | 1 |
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Page 1
High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires.
Nanomaterials (Basel). 2018 May 25;8(6):367. doi: 10.3390/nano8060367.
Nanomaterials (Basel). 2018.
PMID: 29799440
Free PMC article.
A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements.
Piquemal F, Kaja K, Chrétien P, Morán-Meza J, Houzé F, Ulysse C, Harouri A.
Piquemal F, et al. Among authors: houze f.
Beilstein J Nanotechnol. 2023 Nov 22;14:1141-1148. doi: 10.3762/bjnano.14.94. eCollection 2023.
Beilstein J Nanotechnol. 2023.
PMID: 38034476
Free PMC article.
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Electromechanical conversion efficiency of GaN NWs: critical influence of the NW stiffness, the Schottky nano-contact and the surface charge effects.
Gogneau N, Chrétien P, Sodhi T, Couraud L, Leroy L, Travers L, Harmand JC, Julien FH, Tchernycheva M, Houzé F.
Gogneau N, et al. Among authors: houze f.
Nanoscale. 2022 Mar 31;14(13):4965-4976. doi: 10.1039/d1nr07863a.
Nanoscale. 2022.
PMID: 35297939
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Evaluation of the nanotube intrinsic resistance across the tip-carbon nanotube-metal substrate junction by Atomic Force Microscopy.
Dominiczak M, Otubo L, Alamarguy D, Houzé F, Volz S, Noël S, Bai J.
Dominiczak M, et al. Among authors: houze f.
Nanoscale Res Lett. 2011 Apr 14;6(1):335. doi: 10.1186/1556-276X-6-335.
Nanoscale Res Lett. 2011.
PMID: 21711904
Free PMC article.
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Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact.
Jamond N, Chrétien P, Gatilova L, Galopin E, Travers L, Harmand JC, Glas F, Houzé F, Gogneau N.
Jamond N, et al. Among authors: houze f.
Nanoscale. 2017 Mar 30;9(13):4610-4619. doi: 10.1039/c7nr00647k.
Nanoscale. 2017.
PMID: 28323294
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