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Year Number of Results
2011 3
2013 3
2014 2
2016 1
2017 6
2018 1
2019 2
2020 1
2021 6
2022 4
2023 2
2024 1

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31 results

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Page 1
Selective Doping in Silicon Carbide Power Devices.
Roccaforte F, Fiorenza P, Vivona M, Greco G, Giannazzo F. Roccaforte F, et al. Materials (Basel). 2021 Jul 14;14(14):3923. doi: 10.3390/ma14143923. Materials (Basel). 2021. PMID: 34300845 Free PMC article. Review.
Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology.
Li F, Roccaforte F, Greco G, Fiorenza P, La Via F, Pérez-Tomas A, Evans JE, Fisher CA, Monaghan FA, Mawby PA, Jennings M. Li F, et al. Among authors: roccaforte f. Materials (Basel). 2021 Oct 5;14(19):5831. doi: 10.3390/ma14195831. Materials (Basel). 2021. PMID: 34640228 Free PMC article. Review.
Interface Properties of MoS2 van der Waals Heterojunctions with GaN.
Panasci SE, Deretzis I, Schilirò E, La Magna A, Roccaforte F, Koos A, Nemeth M, Pécz B, Cannas M, Agnello S, Giannazzo F. Panasci SE, et al. Among authors: roccaforte f. Nanomaterials (Basel). 2024 Jan 5;14(2):133. doi: 10.3390/nano14020133. Nanomaterials (Basel). 2024. PMID: 38251098 Free PMC article.
Advances in the fabrication of graphene transistors on flexible substrates.
Fisichella G, Lo Verso S, Di Marco S, Vinciguerra V, Schilirò E, Di Franco S, Lo Nigro R, Roccaforte F, Zurutuza A, Centeno A, Ravesi S, Giannazzo F. Fisichella G, et al. Among authors: roccaforte f. Beilstein J Nanotechnol. 2017 Feb 20;8:467-474. doi: 10.3762/bjnano.8.50. eCollection 2017. Beilstein J Nanotechnol. 2017. PMID: 28326237 Free PMC article.
31 results