Fabrice Oehler - Search Results

Year	Number of Results
2008	1
2011	1
2015	1
2016	3
2017	1
2018	1
2019	2
2020	2
2021	1
2022	4
2023	3
2024	0

1

Hybridization and localized flat band in the WSe₂/MoSe₂heterobilayer.

Khalil L, Pierucci D, Velez-Fort E, Avila J, Vergnaud C, Dudin P, Oehler F, Chaste J, Jamet M, Lhuillier E, Pala M, Ouerghi A. Khalil L, et al. Among authors: oehler f. Nanotechnology. 2022 Nov 7;34(4). doi: 10.1088/1361-6528/ac9abe. Nanotechnology. 2022. PMID: 36252554

2

Strain and Spin-Orbit Coupling Engineering in Twisted WS₂/Graphene Heterobilayer.

Ernandes C, Khalil L, Henck H, Zhao MQ, Chaste J, Oehler F, Johnson ATC, Asensio MC, Pierucci D, Pala M, Avila J, Ouerghi A. Ernandes C, et al. Among authors: oehler f. Nanomaterials (Basel). 2021 Oct 31;11(11):2921. doi: 10.3390/nano11112921. Nanomaterials (Basel). 2021. PMID: 34835687 Free PMC article.

3

Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe₂ on GaP(111) Heterostructure.

Mahmoudi A, Bouaziz M, Chapuis N, Kremer G, Chaste J, Romanin D, Pala M, Bertran F, Fèvre PL, Gerber IC, Patriarche G, Oehler F, Wallart X, Ouerghi A. Mahmoudi A, et al. Among authors: oehler f. ACS Nano. 2023 Nov 14;17(21):21307-21316. doi: 10.1021/acsnano.3c05818. Epub 2023 Oct 19. ACS Nano. 2023. PMID: 37856436

4

GaAs/GaInP nanowire solar cell on Si with state-of-the-art V_oc and quasi-Fermi level splitting.

Tong C, Delamarre A, De Lépinau R, Scaccabarozzi A, Oehler F, Harmand JC, Collin S, Cattoni A. Tong C, et al. Among authors: oehler f. Nanoscale. 2022 Sep 15;14(35):12722-12735. doi: 10.1039/d2nr02652j. Nanoscale. 2022. PMID: 35997103

5

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In₂Se₃.

Kremer G, Mahmoudi A, M'Foukh A, Bouaziz M, Rahimi M, Della Rocca ML, Le Fèvre P, Dayen JF, Bertran F, Matzen S, Pala M, Chaste J, Oehler F, Ouerghi A. Kremer G, et al. Among authors: oehler f. ACS Nano. 2023 Oct 10;17(19):18924-18931. doi: 10.1021/acsnano.3c04186. Epub 2023 Aug 16. ACS Nano. 2023. PMID: 37585336

6

Epitaxy of GaN Nanowires on Graphene.

Kumaresan V, Largeau L, Madouri A, Glas F, Zhang H, Oehler F, Cavanna A, Babichev A, Travers L, Gogneau N, Tchernycheva M, Harmand JC. Kumaresan V, et al. Among authors: oehler f. Nano Lett. 2016 Aug 10;16(8):4895-902. doi: 10.1021/acs.nanolett.6b01453. Epub 2016 Jul 26. Nano Lett. 2016. PMID: 27414518

7

Unidirectional Rashba spin splitting in single layer WS_2(1-x)Se_2xalloy.

Zribi J, Pierucci D, Bisti F, Zheng B, Avila J, Khalil L, Ernandes C, Chaste J, Oehler F, Pala M, Maroutian T, Hermes I, Lhuillier E, Pan A, Ouerghi A. Zribi J, et al. Among authors: oehler f. Nanotechnology. 2022 Dec 1;34(7). doi: 10.1088/1361-6528/aca0f6. Nanotechnology. 2022. PMID: 36347029

8

High p doped and robust band structure in Mg-doped hexagonal boron nitride.

Khalil L, Ernandes C, Avila J, Rousseau A, Dudin P, Zhigadlo ND, Cassabois G, Gil B, Oehler F, Chaste J, Ouerghi A. Khalil L, et al. Among authors: oehler f. Nanoscale Adv. 2023 Apr 6;5(12):3225-3232. doi: 10.1039/d2na00843b. eCollection 2023 Jun 13. Nanoscale Adv. 2023. PMID: 37325527 Free PMC article.

9

Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires.

Priante G, Patriarche G, Oehler F, Glas F, Harmand JC. Priante G, et al. Among authors: oehler f. Nano Lett. 2015 Sep 9;15(9):6036-41. doi: 10.1021/acs.nanolett.5b02224. Epub 2015 Aug 5. Nano Lett. 2015. PMID: 26217912

10

Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe₂/Se-terminated GaAs heterojunction grown by molecular beam epitaxy.

Pierucci D, Mahmoudi A, Silly M, Bisti F, Oehler F, Patriarche G, Bonell F, Marty A, Vergnaud C, Jamet M, Boukari H, Lhuillier E, Pala M, Ouerghi A. Pierucci D, et al. Among authors: oehler f. Nanoscale. 2022 Apr 14;14(15):5859-5868. doi: 10.1039/d2nr00458e. Nanoscale. 2022. PMID: 35362486

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