High Tunable BaTixZr1-xO3 Films on Dielectric Substrate for Microwave Applications

Molecules. 2022 Sep 18;27(18):6086. doi: 10.3390/molecules27186086.

Abstract

In this study, the structural and microwave properties of BaTiZrO3 films deposited on alumina substrate were investigated. The films were deposited by RF magnetron sputtering in Ar/O2 ambient atmosphere. The research of the island films at the initial stages of the growth showed that the pyramidal type of growth prevails. It was demonstrated that as-deposited film is a BaZrTiO3 solid solution with a deficiency of titanium compared to the target. The air annealing at temperatures of 1100-1200 °C leads to the formation of a well-formed crystalline solid solution of BaZr0.3Ti0.7O3 with a predominant orientation (h00). The investigation of microwave parameters of the films fabricated at different conditions showed that the best performance with the tunability of 4.6 (78%), and the Q-factor of 18 to 40 at 2 GHz was achieved at annealing temperature of 1150 °C.

Keywords: barium titanate–zirconate; initial stages of growth; microwave properties; rf magnetron sputtering.

MeSH terms

  • Aluminum Oxide
  • Microwaves*
  • Temperature
  • Titanium* / chemistry
  • X-Ray Diffraction

Substances

  • Titanium
  • Aluminum Oxide

Grants and funding

This research received no external funding.