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Page 1
Interface Properties of MoS2 van der Waals Heterojunctions with GaN.
Panasci SE, Deretzis I, Schilirò E, La Magna A, Roccaforte F, Koos A, Nemeth M, Pécz B, Cannas M, Agnello S, Giannazzo F. Panasci SE, et al. Among authors: schiliro e. Nanomaterials (Basel). 2024 Jan 5;14(2):133. doi: 10.3390/nano14020133. Nanomaterials (Basel). 2024. PMID: 38251098 Free PMC article.
Advances in the fabrication of graphene transistors on flexible substrates.
Fisichella G, Lo Verso S, Di Marco S, Vinciguerra V, Schilirò E, Di Franco S, Lo Nigro R, Roccaforte F, Zurutuza A, Centeno A, Ravesi S, Giannazzo F. Fisichella G, et al. Among authors: schiliro e. Beilstein J Nanotechnol. 2017 Feb 20;8:467-474. doi: 10.3762/bjnano.8.50. eCollection 2017. Beilstein J Nanotechnol. 2017. PMID: 28326237 Free PMC article.
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization.
Panasci SE, Koos A, Schilirò E, Di Franco S, Greco G, Fiorenza P, Roccaforte F, Agnello S, Cannas M, Gelardi FM, Sulyok A, Nemeth M, Pécz B, Giannazzo F. Panasci SE, et al. Among authors: schiliro e. Nanomaterials (Basel). 2022 Jan 6;12(2):182. doi: 10.3390/nano12020182. Nanomaterials (Basel). 2022. PMID: 35055201 Free PMC article.
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
Schilirò E, Giannazzo F, Di Franco S, Greco G, Fiorenza P, Roccaforte F, Prystawko P, Kruszewski P, Leszczynski M, Cora I, Pécz B, Fogarassy Z, Lo Nigro R. Schilirò E, et al. Nanomaterials (Basel). 2021 Dec 7;11(12):3316. doi: 10.3390/nano11123316. Nanomaterials (Basel). 2021. PMID: 34947665 Free PMC article.
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