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The Evolution of Manufacturing Technology for GaN Electronic Devices.
Liu AC, Tu PT, Langpoklakpam C, Huang YW, Chang YT, Tzou AJ, Hsu LH, Lin CH, Kuo HC, Chang EY. Liu AC, et al. Among authors: chang ey. Micromachines (Basel). 2021 Jun 23;12(7):737. doi: 10.3390/mi12070737. Micromachines (Basel). 2021. PMID: 34201620 Free PMC article. Review.
A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer.
Weng YC, Lin YC, Hsu HT, Kao ML, Huang HY, Ueda D, Ha MT, Yang CY, Maa JS, Chang EY, Dee CF. Weng YC, et al. Among authors: chang ey. Materials (Basel). 2022 Jan 18;15(3):703. doi: 10.3390/ma15030703. Materials (Basel). 2022. PMID: 35160649 Free PMC article.
Monolithic 3D CMOS Using Layered Semiconductors.
Sachid AB, Tosun M, Desai SB, Hsu CY, Lien DH, Madhvapathy SR, Chen YZ, Hettick M, Kang JS, Zeng Y, He JH, Chang EY, Chueh YL, Javey A, Hu C. Sachid AB, et al. Among authors: chang ey. Adv Mater. 2016 Apr 6;28(13):2547-54. doi: 10.1002/adma.201505113. Epub 2016 Feb 2. Adv Mater. 2016. PMID: 26833783
22 results