Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se2 Thin Films

Materials (Basel). 2021 Jun 28;14(13):3596. doi: 10.3390/ma14133596.

Abstract

Cu(In,Ga)Se2 (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium.

Keywords: copper indium gallium selenide; indium bromide; post-deposition treatment; recrystallization.