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daiichi koretomo
(2 results)?
Record-High-Performance Hydrogenated In-Ga-Zn-O Flexible Schottky Diodes.
ACS Appl Mater Interfaces. 2020 Oct 21;12(42):47739-47746. doi: 10.1021/acsami.0c12638. Epub 2020 Oct 13.
ACS Appl Mater Interfaces. 2020.
PMID: 33047607
Memristive characteristic of an amorphous Ga-Sn-O thin-film device.
Sugisaki S, Matsuda T, Uenuma M, Nabatame T, Nakashima Y, Imai T, Magari Y, Koretomo D, Furuta M, Kimura M.
Sugisaki S, et al. Among authors: koretomo d.
Sci Rep. 2019 Feb 26;9(1):2757. doi: 10.1038/s41598-019-39549-9.
Sci Rep. 2019.
PMID: 30808898
Free PMC article.
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Quantum Confinement Effect in Amorphous In-Ga-Zn-O Heterojunction Channels for Thin-Film Transistors.
Koretomo D, Hamada S, Magari Y, Furuta M.
Koretomo D, et al.
Materials (Basel). 2020 Apr 20;13(8):1935. doi: 10.3390/ma13081935.
Materials (Basel). 2020.
PMID: 32325945
Free PMC article.
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Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density.
Kurasaki A, Tanaka R, Sugisaki S, Matsuda T, Koretomo D, Magari Y, Furuta M, Kimura M.
Kurasaki A, et al. Among authors: koretomo d.
Materials (Basel). 2019 Oct 2;12(19):3236. doi: 10.3390/ma12193236.
Materials (Basel). 2019.
PMID: 31581707
Free PMC article.
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