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2019 3
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2022 1
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Page 1
New Approaches and Understandings in the Growth of Cubic Silicon Carbide.
La Via F, Zimbone M, Bongiorno C, La Magna A, Fisicaro G, Deretzis I, Scuderi V, Calabretta C, Giannazzo F, Zielinski M, Anzalone R, Mauceri M, Crippa D, Scalise E, Marzegalli A, Sarikov A, Miglio L, Jokubavicius V, Syväjärvi M, Yakimova R, Schuh P, Schöler M, Kollmuss M, Wellmann P. La Via F, et al. Among authors: calabretta c. Materials (Basel). 2021 Sep 16;14(18):5348. doi: 10.3390/ma14185348. Materials (Basel). 2021. PMID: 34576572 Free PMC article. Review.
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers.
Anzalone R, Zimbone M, Calabretta C, Mauceri M, Alberti A, Reitano R, La Via F. Anzalone R, et al. Among authors: calabretta c. Materials (Basel). 2019 Oct 10;12(20):3293. doi: 10.3390/ma12203293. Materials (Basel). 2019. PMID: 31658766 Free PMC article.
Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC.
Calabretta C, Scuderi V, Bongiorno C, Cannizzaro A, Anzalone R, Calcagno L, Mauceri M, Crippa D, Boninelli S, La Via F. Calabretta C, et al. Cryst Growth Des. 2022 Aug 3;22(8):4996-5003. doi: 10.1021/acs.cgd.2c00515. Epub 2022 Jun 29. Cryst Growth Des. 2022. PMID: 35942119 Free PMC article.
3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate.
Zimbone M, Zielinski M, Bongiorno C, Calabretta C, Anzalone R, Scalese S, Fisicaro G, La Magna A, Mancarella F, La Via F. Zimbone M, et al. Among authors: calabretta c. Materials (Basel). 2019 Oct 18;12(20):3407. doi: 10.3390/ma12203407. Materials (Basel). 2019. PMID: 31635213 Free PMC article.
Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers.
Calabretta C, Agati M, Zimbone M, Boninelli S, Castiello A, Pecora A, Fortunato G, Calcagno L, Torrisi L, La Via F. Calabretta C, et al. Materials (Basel). 2019 Oct 15;12(20):3362. doi: 10.3390/ma12203362. Materials (Basel). 2019. PMID: 31618862 Free PMC article.