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2008 | 1 |
2010 | 2 |
2013 | 1 |
2024 | 0 |
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Page 1
Resistive switching at the nanoscale in the Mott insulator compound GaTa4Se8.
Nano Lett. 2013 Aug 14;13(8):3648-53. doi: 10.1021/nl401510p. Epub 2013 Jul 22.
Nano Lett. 2013.
PMID: 23826620
Half-metallic ferromagnetism and large negative magnetoresistance in the new lacunar spinel GaTi3VS8.
Dorolti E, Cario L, Corraze B, Janod E, Vaju C, Koo HJ, Kan E, Whangbo MH.
Dorolti E, et al. Among authors: vaju c.
J Am Chem Soc. 2010 Apr 28;132(16):5704-10. doi: 10.1021/ja908128b.
J Am Chem Soc. 2010.
PMID: 20356073
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Electric-Pulse-driven Electronic Phase Separation, Insulator-Metal Transition, and Possible Superconductivity in a Mott Insulator.
Vaju C, Cario L, Corraze B, Janod E, Dubost V, Cren T, Roditchev D, Braithwaite D, Chauvet O.
Vaju C, et al.
Adv Mater. 2008 Jul 17;20(14):2760-5. doi: 10.1002/adma.200702967. Epub 2008 Jun 5.
Adv Mater. 2008.
PMID: 25213903
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Electric-field-induced resistive switching in a family of mott insulators: Towards a new class of RRAM memories.
Cario L, Vaju C, Corraze B, Guiot V, Janod E.
Cario L, et al. Among authors: vaju c.
Adv Mater. 2010 Dec 1;22(45):5193-7. doi: 10.1002/adma.201002521.
Adv Mater. 2010.
PMID: 20957700
No abstract available.
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