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Page 1
InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities.
Materials (Basel). 2018 Dec 27;12(1):87. doi: 10.3390/ma12010087.
Materials (Basel). 2018.
PMID: 30591676
Free PMC article.
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy.
Borg M, Gignac L, Bruley J, Malmgren A, Sant S, Convertino C, Rossell MD, Sousa M, Breslin C, Riel H, Moselund KE, Schmid H.
Borg M, et al. Among authors: convertino c.
Nanotechnology. 2019 Feb 22;30(8):084004. doi: 10.1088/1361-6528/aaf547. Epub 2018 Nov 30.
Nanotechnology. 2019.
PMID: 30524107
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