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zhong rong huan
(10 results)?
Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor.
Micromachines (Basel). 2022 Sep 19;13(9):1554. doi: 10.3390/mi13091554.
Micromachines (Basel). 2022.
PMID: 36144177
Free PMC article.
Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator.
Chiu HC, Liu CH, Huang CR, Chiu CC, Wang HC, Kao HL, Lin SY, Chien FT.
Chiu HC, et al. Among authors: huang cr.
Membranes (Basel). 2021 Sep 23;11(10):727. doi: 10.3390/membranes11100727.
Membranes (Basel). 2021.
PMID: 34677492
Free PMC article.
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Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer.
Wang HC, Liu CH, Huang CR, Shih MH, Chiu HC, Kao HL, Liu X.
Wang HC, et al. Among authors: huang cr.
Materials (Basel). 2022 May 13;15(10):3503. doi: 10.3390/ma15103503.
Materials (Basel). 2022.
PMID: 35629530
Free PMC article.
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Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate.
Wang HC, Liu CH, Huang CR, Chiu HC, Kao HL, Liu X.
Wang HC, et al. Among authors: huang cr.
Micromachines (Basel). 2022 May 22;13(5):807. doi: 10.3390/mi13050807.
Micromachines (Basel). 2022.
PMID: 35630274
Free PMC article.
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High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate.
Huang YC, Chiu HC, Kao HL, Wang HC, Liu CH, Huang CR, Chen SW.
Huang YC, et al. Among authors: huang cr.
Micromachines (Basel). 2021 May 1;12(5):509. doi: 10.3390/mi12050509.
Micromachines (Basel). 2021.
PMID: 34062908
Free PMC article.
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Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates.
Huang CR, Chiu HC, Liu CH, Wang HC, Kao HL, Chen CT, Chang KJ.
Huang CR, et al.
Membranes (Basel). 2021 Oct 30;11(11):848. doi: 10.3390/membranes11110848.
Membranes (Basel). 2021.
PMID: 34832077
Free PMC article.
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