Chi Jung Kang - Search Results

Year	Number of Results
2010	2
2012	2
2013	2
2014	2
2015	4
2017	3
2018	4
2019	2
2020	2
2021	2
2024	0

1

Resistive switching characteristics of ZnO nanowires.

Yoo EJ, Shin IK, Yoon TS, Choi YJ, Kang CJ. Yoo EJ, et al. Among authors: kang cj. J Nanosci Nanotechnol. 2014 Dec;14(12):9459-64. doi: 10.1166/jnn.2014.10157. J Nanosci Nanotechnol. 2014. PMID: 25971083

2

Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device.

Kang W, Woo K, Na HB, Kang CJ, Yoon TS, Kim KM, Lee HH. Kang W, et al. Among authors: kang cj. Nanomaterials (Basel). 2021 Feb 9;11(2):441. doi: 10.3390/nano11020441. Nanomaterials (Basel). 2021. PMID: 33572253 Free PMC article.

3

High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO.

Kim GH, Lee J, Lee JY, Han J, Choi Y, Kang CJ, Kim KB, Lee W, Lim J, Cho SY. Kim GH, et al. Among authors: kang cj. ACS Appl Mater Interfaces. 2021 Sep 15;13(36):43075-43084. doi: 10.1021/acsami.1c11898. Epub 2021 Aug 31. ACS Appl Mater Interfaces. 2021. PMID: 34463100

4

Conductance control in stabilized carotenoid wires.

Maeng J, Kim SB, Lee NJ, Choi E, Jung SY, Hong I, Bae SH, Oh JT, Lim B, Kim JW, Kang CJ, Koo S. Maeng J, et al. Among authors: kang cj. Chemistry. 2010 Jul 5;16(25):7395-9. doi: 10.1002/chem.201000700. Chemistry. 2010. PMID: 20496361 No abstract available.

5

Investigation of Switching Phenomenon in Metal-Tantalum Oxide Interface.

Yawar A, Park MR, Hu Q, Song WJ, Yoon TS, Choi YJ, Kang CJ. Yawar A, et al. Among authors: kang cj. J Nanosci Nanotechnol. 2015 Oct;15(10):7564-8. doi: 10.1166/jnn.2015.11133. J Nanosci Nanotechnol. 2015. PMID: 26726372

6

A study on the resistance switching of Ag₂Se and Ta₂O₅ heterojunctions using structural engineering.

Lee TS, Lee NJ, Abbas H, Hu Q, Yoon TS, Lee HH, Le Shim E, Kang CJ. Lee TS, et al. Among authors: kang cj. Nanotechnology. 2018 Jan 19;29(3):035202. doi: 10.1088/1361-6528/aa9e79. Epub 2017 Dec 18. Nanotechnology. 2018. PMID: 29251266

7

Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistor.

Beom K, Kim M, Lee H, Kim HJ, Cho SY, Lee HH, Kang CJ, Yoon TS. Beom K, et al. Among authors: kang cj. Nanotechnology. 2020 Apr 9;31(26):265201. doi: 10.1088/1361-6528/ab7fce. Epub 2020 Mar 13. Nanotechnology. 2020. PMID: 32168505

8

Single- and double-gate synaptic transistor with TaO _x gate insulator and IGZO channel layer.

Beom K, Yang P, Park D, Kim HJ, Lee HH, Kang CJ, Yoon TS. Beom K, et al. Among authors: kang cj. Nanotechnology. 2019 Jan 11;30(2):025203. doi: 10.1088/1361-6528/aae8d2. Epub 2018 Nov 2. Nanotechnology. 2019. PMID: 30387440

9

The coexistence of threshold and memory switching characteristics of ALD HfO₂ memristor synaptic arrays for energy-efficient neuromorphic computing.

Abbas H, Abbas Y, Hassan G, Sokolov AS, Jeon YR, Ku B, Kang CJ, Choi C. Abbas H, et al. Among authors: kang cj. Nanoscale. 2020 Jul 9;12(26):14120-14134. doi: 10.1039/d0nr02335c. Nanoscale. 2020. PMID: 32597451

10

Synaptic behaviors of thin-film transistor with a Pt/HfO _x /n-type indium-gallium-zinc oxide gate stack.

Yang P, Park D, Beom K, Kim HJ, Kang CJ, Yoon TS. Yang P, et al. Among authors: kang cj. Nanotechnology. 2018 Jul 20;29(29):295201. doi: 10.1088/1361-6528/aac17e. Epub 2018 May 1. Nanotechnology. 2018. PMID: 29714170

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