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Ge nanoparticles in SiO2 for near infrared photodetectors with high performance.
Stavarache I, Teodorescu VS, Prepelita P, Logofatu C, Ciurea ML. Stavarache I, et al. Sci Rep. 2019 Jul 16;9(1):10286. doi: 10.1038/s41598-019-46711-w. Sci Rep. 2019. PMID: 31312003 Free PMC article.
From the absorption curves we obtained the Ge band gap of 1.39 eV for 300 C deposited films and 1.44 eV for the films deposited at 500 C. ...The photocurrent spectra present different cutoff wavelengths depending on the deposition temperature, i.e. 1325 nm for 300 …
From the absorption curves we obtained the Ge band gap of 1.39 eV for 300 C deposited films and 1.44 eV for the films deposited at 50 …
Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors.
Lepadatu AM, Palade C, Slav A, Maraloiu AV, Lazanu S, Stoica T, Logofatu C, Teodorescu VS, Ciurea ML. Lepadatu AM, et al. Nanotechnology. 2017 Apr 28;28(17):175707. doi: 10.1088/1361-6528/aa66b7. Epub 2017 Mar 14. Nanotechnology. 2017. PMID: 28291015
Both Ge and HfO(2) are nanostructured by RTA at moderate temperatures of 600-700 C. By nanostructuring at 600 C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 10(15) m(-2) is achieved in the floating gate (inte …
Both Ge and HfO(2) are nanostructured by RTA at moderate temperatures of 600-700 C. By nanostructuring at 600 C, the formation …
SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared.
Stavarache I, Logofatu C, Sultan MT, Manolescu A, Svavarsson HG, Teodorescu VS, Ciurea ML. Stavarache I, et al. Sci Rep. 2020 Feb 24;10(1):3252. doi: 10.1038/s41598-020-60000-x. Sci Rep. 2020. PMID: 32094361 Free PMC article.
In this study, SiGe-SiO(2) amorphous films were deposited by magnetron sputtering on Si substrate followed by rapid thermal annealing at 700, 800 and 1000 C. We investigated films with Si:Ge:SiO(2) compositions of 25:25:50 vol.% and 5:45:50 vol.%. ...The photocurrent cutof …
In this study, SiGe-SiO(2) amorphous films were deposited by magnetron sputtering on Si substrate followed by rapid thermal annealing at 700 …