Byungjin Cho - Search Results

Year	Number of Results
2008	1
2009	1
2010	3
2011	6
2012	3
2013	2
2014	1
2015	5
2016	6
2017	5
2018	4
2019	4
2020	4
2021	2
2022	4
2023	4
2024	1

1

Preparation and Properties of 2D Materials.

Cho B, Kim Y. Cho B, et al. Nanomaterials (Basel). 2020 Apr 16;10(4):764. doi: 10.3390/nano10040764. Nanomaterials (Basel). 2020. PMID: 32316204 Free PMC article.

2

Reliable synaptic plasticity of InGaZnO transistor with TiO₂interlayer.

Jeong SH, Oh S, Kwon O, Kim DH, Seo HY, Park W, Cho B. Jeong SH, et al. Among authors: cho b. Nanotechnology. 2023 Dec 29;35(11). doi: 10.1088/1361-6528/ad1540. Nanotechnology. 2023. PMID: 38091622

3

Highly Reproducible Heterosynaptic Plasticity Enabled by MoS₂/ZrO_2-x Heterostructure Memtransistor.

Jang HY, Kwon O, Nam JH, Kwon JD, Kim Y, Park W, Cho B. Jang HY, et al. Among authors: cho b. ACS Appl Mater Interfaces. 2022 Nov 23;14(46):52173-52181. doi: 10.1021/acsami.2c15497. Epub 2022 Nov 11. ACS Appl Mater Interfaces. 2022. PMID: 36368778

4

Reinforcing Synaptic Plasticity of Defect-Tolerant States in Alloyed 2D Artificial Transistors.

Bak J, Kim S, Park K, Yoon J, Yang M, Kim UJ, Hosono H, Park J, You B, Kwon O, Cho B, Park SW, Hahm MG, Lee M. Bak J, et al. Among authors: cho b. ACS Appl Mater Interfaces. 2023 Aug 23;15(33):39539-39549. doi: 10.1021/acsami.3c07578. Epub 2023 Aug 10. ACS Appl Mater Interfaces. 2023. PMID: 37614002

5

Chemical Sensing of 2D Graphene/MoS2 Heterostructure device.

Cho B, Yoon J, Lim SK, Kim AR, Kim DH, Park SG, Kwon JD, Lee YJ, Lee KH, Lee BH, Ko HC, Hahm MG. Cho B, et al. ACS Appl Mater Interfaces. 2015 Aug 5;7(30):16775-80. doi: 10.1021/acsami.5b04541. Epub 2015 Jul 22. ACS Appl Mater Interfaces. 2015. PMID: 26161691

6

Flexible molecular-scale electronic devices.

Park S, Wang G, Cho B, Kim Y, Song S, Ji Y, Yoon MH, Lee T. Park S, et al. Among authors: cho b. Nat Nanotechnol. 2012 Jun 3;7(7):438-42. doi: 10.1038/nnano.2012.81. Nat Nanotechnol. 2012. PMID: 22659606

7

Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

Kim AR, Kim Y, Nam J, Chung HS, Kim DJ, Kwon JD, Park SW, Park J, Choi SY, Lee BH, Park JH, Lee KH, Kim DH, Choi SM, Ajayan PM, Hahm MG, Cho B. Kim AR, et al. Among authors: cho b. Nano Lett. 2016 Mar 9;16(3):1890-5. doi: 10.1021/acs.nanolett.5b05036. Epub 2016 Feb 10. Nano Lett. 2016. PMID: 26839956

8

Conduction Mechanism in Acceptor- or Donor-Doped ZrO₂ Bulk and Thin Films.

Kim M, Oh S, Cho B, Joo JH. Kim M, et al. Among authors: cho b. ACS Appl Mater Interfaces. 2023 Jul 5;15(26):31627-31634. doi: 10.1021/acsami.3c04758. Epub 2023 Jun 22. ACS Appl Mater Interfaces. 2023. PMID: 37347973

9

Enhanced Performance of MoS₂ Photodetectors by Inserting an ALD-Processed TiO₂ Interlayer.

Pak Y, Park W, Mitra S, Sasikala Devi AA, Loganathan K, Kumaresan Y, Kim Y, Cho B, Jung GY, Hussain MM, Roqan IS. Pak Y, et al. Among authors: cho b. Small. 2018 Feb;14(5). doi: 10.1002/smll.201703176. Epub 2017 Dec 4. Small. 2018. PMID: 29205838

10

Robust 2D MoS₂ Artificial Synapse Device Based on a Lithium Silicate Solid Electrolyte for High-Precision Analogue Neuromorphic Computing.

Park B, Hwang Y, Kwon O, Hwang S, Lee JA, Choi DH, Lee SK, Kim AR, Cho B, Kwon JD, Lee JI, Kim Y. Park B, et al. Among authors: cho b. ACS Appl Mater Interfaces. 2022 Nov 30;14(47):53038-53047. doi: 10.1021/acsami.2c14080. Epub 2022 Nov 17. ACS Appl Mater Interfaces. 2022. PMID: 36394301

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