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Charge transport mechanism in the forming-free memristor based on silicon nitride.
Sci Rep. 2021 Jan 28;11(1):2417. doi: 10.1038/s41598-021-82159-7.
Sci Rep. 2021.
PMID: 33510310
Free PMC article.
Electronic structure and charge transport mechanism in a forming-free SiO x -based memristor.
Gismatulin AA, Voronkovskii VA, Kamaev GN, Novikov YN, Kruchinin VN, Krivyakin GK, Gritsenko VA, Prosvirin IP, Chin A.
Gismatulin AA, et al.
Nanotechnology. 2020 Dec 11;31(50):505704. doi: 10.1088/1361-6528/abb505.
Nanotechnology. 2020.
PMID: 33021224
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Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide.
Gritsenko VA, Perevalov TV, Voronkovskii VA, Gismatulin AA, Kruchinin VN, Aliev VS, Pustovarov VA, Prosvirin IP, Roizin Y.
Gritsenko VA, et al. Among authors: gismatulin aa.
ACS Appl Mater Interfaces. 2018 Jan 31;10(4):3769-3775. doi: 10.1021/acsami.7b16753. Epub 2018 Jan 22.
ACS Appl Mater Interfaces. 2018.
PMID: 29308879
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