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Perovskite Core-Shell Nanowire Transistors: Interfacial Transfer Doping and Surface Passivation.
Meng Y, Lai Z, Li F, Wang W, Yip S, Quan Q, Bu X, Wang F, Bao Y, Hosomi T, Takahashi T, Nagashima K, Yanagida T, Lu J, Ho JC. Meng Y, et al. Among authors: quan q. ACS Nano. 2020 Oct 27;14(10):12749-12760. doi: 10.1021/acsnano.0c03101. Epub 2020 Sep 25. ACS Nano. 2020. PMID: 32910641
Once fabricated into NW devices, due to the efficient interfacial charge transfer and reduced impurity scattering, a 15 increase in the field-effect hole mobility (mu(h)) from 1.5 to 23.3 cm(2)/(V s) is accomplished after depositing the 10 nm thick MoO(3) shell. ...
Once fabricated into NW devices, due to the efficient interfacial charge transfer and reduced impurity scattering, a 15 increase in the fiel …
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