Jiang A - Search Results

1

Ferroelectric Domain Wall Delayer and Low-Dropout Regulator.

Li Y, Hu D, Sun J, Zhang W, Jiang A. Li Y, et al. Among authors: jiang a. ACS Appl Mater Interfaces. 2024 Apr 17;16(15):19691-19698. doi: 10.1021/acsami.3c18979. Epub 2024 Apr 2. ACS Appl Mater Interfaces. 2024. PMID: 38563689

2

High-Power LiNbO₃ Domain-Wall Nanodevices.

Sun J, Li Y, Zhang B, Jiang A. Sun J, et al. Among authors: jiang a. ACS Appl Mater Interfaces. 2023 Feb 15;15(6):8691-8698. doi: 10.1021/acsami.2c20579. Epub 2023 Feb 1. ACS Appl Mater Interfaces. 2023. PMID: 36724474

3

Hybrid Dry and Wet Etching of LiNbO₃ Domain-Wall Memory Devices with 90° Etching Angles and Excellent Electrical Properties.

Shen B, Tan X, Wang C, Fan H, Hu D, Sun J, Jiang J, Jiang A. Shen B, et al. Among authors: jiang a, jiang j. ACS Appl Mater Interfaces. 2023 Oct 26. doi: 10.1021/acsami.3c11445. Online ahead of print. ACS Appl Mater Interfaces. 2023. PMID: 37883090

4

Advanced Etching Techniques of LiNbO₃ Nanodevices.

Shen B, Hu D, Dai C, Yu X, Tan X, Sun J, Jiang J, Jiang A. Shen B, et al. Among authors: jiang a, jiang j. Nanomaterials (Basel). 2023 Oct 18;13(20):2789. doi: 10.3390/nano13202789. Nanomaterials (Basel). 2023. PMID: 37887940 Free PMC article.

5

Energy-Efficient Ferroelectric Domain Wall Memory with Controlled Domain Switching Dynamics.

Wang C, Jiang J, Chai X, Lian J, Hu X, Jiang AQ. Wang C, et al. ACS Appl Mater Interfaces. 2020 Oct 7;12(40):44998-45004. doi: 10.1021/acsami.0c13534. Epub 2020 Sep 24. ACS Appl Mater Interfaces. 2020. PMID: 32914949

6

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO₃ Thin Films.

Ao MH, Zheng SZ, Zhong QL, Zhang WD, Hou X, Chai XJ, Wang C, Fan HC, Lian JW, Cheng Y, Wang J, Jiang J, Jiang AQ. Ao MH, et al. ACS Appl Mater Interfaces. 2021 Jul 21;13(28):33291-33299. doi: 10.1021/acsami.1c08022. Epub 2021 Jul 9. ACS Appl Mater Interfaces. 2021. PMID: 34242011

7

Size-Controlled Polarization Retention and Wall Current in Lithium Niobate Single-Crystal Memories.

Hu X, Hou X, Zhang Y, Chai X, Lian J, Wang C, Wang J, Jiang J, Jiang A. Hu X, et al. Among authors: jiang a, jiang j. ACS Appl Mater Interfaces. 2021 Apr 14;13(14):16641-16649. doi: 10.1021/acsami.0c22969. Epub 2021 Apr 1. ACS Appl Mater Interfaces. 2021. PMID: 33793196

8

Ferroelectric domain wall memory with embedded selector realized in LiNbO₃ single crystals integrated on Si wafers.

Jiang AQ, Geng WP, Lv P, Hong JW, Jiang J, Wang C, Chai XJ, Lian JW, Zhang Y, Huang R, Zhang DW, Scott JF, Hwang CS. Jiang AQ, et al. Nat Mater. 2020 Nov;19(11):1188-1194. doi: 10.1038/s41563-020-0702-z. Epub 2020 Jun 15. Nat Mater. 2020. PMID: 32541933

9

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.

Jiang J, Bai ZL, Chen ZH, He L, Zhang DW, Zhang QH, Shi JA, Park MH, Scott JF, Hwang CS, Jiang AQ. Jiang J, et al. Nat Mater. 2018 Jan;17(1):49-56. doi: 10.1038/nmat5028. Epub 2017 Nov 20. Nat Mater. 2018. PMID: 29180776

10

Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance Supercapacitors.

Ren QH, Zhang Y, Lu HL, Wang YP, Liu WJ, Ji XM, Devi A, Jiang AQ, Zhang DW. Ren QH, et al. Among authors: jiang aq. ACS Appl Mater Interfaces. 2018 Jan 10;10(1):468-476. doi: 10.1021/acsami.7b13392. Epub 2017 Dec 18. ACS Appl Mater Interfaces. 2018. PMID: 29211442

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