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Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates.
Nanoscale Adv. 2023 Mar 20;5(7):2119. doi: 10.1039/d3na90031b. eCollection 2023 Mar 28.
Nanoscale Adv. 2023.
PMID: 36998650
Free PMC article.
Environmental sensitivity of GaN nanofins grown by selective area molecular beam epitaxy.
Pantle F, Wörle S, Karlinger M, Rauh F, Kraut M, Stutzmann M.
Pantle F, et al. Among authors: worle s.
Nanotechnology. 2023 Feb 13;34(17). doi: 10.1088/1361-6528/acb4f6.
Nanotechnology. 2023.
PMID: 36669201
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Influence of environmental conditions and surface treatments on the photoluminescence properties of GaN nanowires and nanofins.
Kraut M, Pantle F, Wörle S, Sirotti E, Zeidler A, Eckmann F, Stutzmann M.
Kraut M, et al. Among authors: worle s.
Nanotechnology. 2021 Sep 14;32(49). doi: 10.1088/1361-6528/ac1dd1.
Nanotechnology. 2021.
PMID: 34399419
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Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates.
Pantle F, Becker F, Kraut M, Wörle S, Hoffmann T, Artmeier S, Stutzmann M.
Pantle F, et al. Among authors: worle s.
Nanoscale Adv. 2021 May 5;3(13):3835-3845. doi: 10.1039/d1na00221j. eCollection 2021 Jun 30.
Nanoscale Adv. 2021.
PMID: 36133019
Free PMC article.
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