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High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy.
Nanomaterials (Basel). 2021 Jun 21;11(6):1626. doi: 10.3390/nano11061626.
Nanomaterials (Basel). 2021.
PMID: 34205790
Free PMC article.
Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress.
Fiorenza P, Alessandrino MS, Carbone B, Di Martino C, Russo A, Saggio M, Venuto C, Zanetti E, Giannazzo F, Roccaforte F.
Fiorenza P, et al. Among authors: alessandrino ms.
Nanotechnology. 2020 Mar 20;31(12):125203. doi: 10.1088/1361-6528/ab5ff6. Epub 2019 Dec 9.
Nanotechnology. 2020.
PMID: 31816608
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A look underneath the SiO2/4H-SiC interface after N2O thermal treatments.
Fiorenza P, Giannazzo F, Swanson LK, Frazzetto A, Lorenti S, Alessandrino MS, Roccaforte F.
Fiorenza P, et al. Among authors: alessandrino ms.
Beilstein J Nanotechnol. 2013 Apr 8;4:249-54. doi: 10.3762/bjnano.4.26. Print 2013.
Beilstein J Nanotechnol. 2013.
PMID: 23616945
Free PMC article.
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