Barraud S - Search Results

1

Process Variability-Technological Challenge and Design Issue for Nanoscale Devices.

Lorenz J, Bär E, Barraud S, Brown AR, Evanschitzky P, Klüpfel F, Wang L. Lorenz J, et al. Among authors: barraud s. Micromachines (Basel). 2018 Dec 23;10(1):6. doi: 10.3390/mi10010006. Micromachines (Basel). 2018. PMID: 30583573 Free PMC article.

2

Integration of Ultra-Low Volume Pneumatic Microfluidics with a Three-Dimensional Electrode Network for On-Chip Biochemical Sensing.

Tomar S, Lasne C, Barraud S, Ernst T, Guiducci C. Tomar S, et al. Among authors: barraud s. Micromachines (Basel). 2021 Jun 28;12(7):762. doi: 10.3390/mi12070762. Micromachines (Basel). 2021. PMID: 34203488 Free PMC article.

3

3D analysis of advanced nano-devices using electron and atom probe tomography.

Grenier A, Duguay S, Barnes JP, Serra R, Haberfehlner G, Cooper D, Bertin F, Barraud S, Audoit G, Arnoldi L, Cadel E, Chabli A, Vurpillot F. Grenier A, et al. Among authors: barraud s. Ultramicroscopy. 2014 Jan;136:185-92. doi: 10.1016/j.ultramic.2013.10.001. Epub 2013 Oct 17. Ultramicroscopy. 2014. PMID: 24189616

4

A CMOS silicon spin qubit.

Maurand R, Jehl X, Kotekar-Patil D, Corna A, Bohuslavskyi H, Laviéville R, Hutin L, Barraud S, Vinet M, Sanquer M, De Franceschi S. Maurand R, et al. Among authors: barraud s. Nat Commun. 2016 Nov 24;7:13575. doi: 10.1038/ncomms13575. Nat Commun. 2016. PMID: 27882926 Free PMC article.

5

3D spatial resolution improvement by dual-axis electron tomography: application to tri-gate transistors.

Haberfehlner G, Serra R, Cooper D, Barraud S, Bleuet P. Haberfehlner G, et al. Among authors: barraud s. Ultramicroscopy. 2014 Jan;136:144-53. doi: 10.1016/j.ultramic.2013.09.006. Epub 2013 Oct 4. Ultramicroscopy. 2014. PMID: 24141183

6

Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature.

Lavieville R, Triozon F, Barraud S, Corna A, Jehl X, Sanquer M, Li J, Abisset A, Duchemin I, Niquet YM. Lavieville R, et al. Among authors: barraud s. Nano Lett. 2015 May 13;15(5):2958-64. doi: 10.1021/nl504806s. Epub 2015 May 4. Nano Lett. 2015. PMID: 25923197

7

Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor.

van der Heijden J, Kobayashi T, House MG, Salfi J, Barraud S, Laviéville R, Simmons MY, Rogge S. van der Heijden J, et al. Among authors: barraud s. Sci Adv. 2018 Dec 7;4(12):eaat9199. doi: 10.1126/sciadv.aat9199. eCollection 2018 Dec. Sci Adv. 2018. PMID: 30539142 Free PMC article.

8

Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits.

Crippa A, Maurand R, Bourdet L, Kotekar-Patil D, Amisse A, Jehl X, Sanquer M, Laviéville R, Bohuslavskyi H, Hutin L, Barraud S, Vinet M, Niquet YM, De Franceschi S. Crippa A, et al. Among authors: barraud s. Phys Rev Lett. 2018 Mar 30;120(13):137702. doi: 10.1103/PhysRevLett.120.137702. Phys Rev Lett. 2018. PMID: 29694195

9

Seo M, Roulleau P, Roche P, Glattli DC, Sanquer M, Jehl X, Hutin L, Barraud S, Parmentier FD. Seo M, et al. Among authors: barraud s. Phys Rev Lett. 2018 Jul 13;121(2):027701. doi: 10.1103/PhysRevLett.121.027701. Phys Rev Lett. 2018. PMID: 30085716

10

Gate-based high fidelity spin readout in a CMOS device.

Urdampilleta M, Niegemann DJ, Chanrion E, Jadot B, Spence C, Mortemousque PA, Bäuerle C, Hutin L, Bertrand B, Barraud S, Maurand R, Sanquer M, Jehl X, De Franceschi S, Vinet M, Meunier T. Urdampilleta M, et al. Among authors: barraud s. Nat Nanotechnol. 2019 Aug;14(8):737-741. doi: 10.1038/s41565-019-0443-9. Epub 2019 May 13. Nat Nanotechnol. 2019. PMID: 31086305

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