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Evaluation of the concentration of point defects in GaN.
Sci Rep. 2017 Aug 24;7(1):9297. doi: 10.1038/s41598-017-08570-1.
Sci Rep. 2017.
PMID: 28839151
Free PMC article.
Small non-uniform basal crystal fields in HVPE free-standing GaN:Mg as evidenced by angular dependent and frequency-dependent EPR.
Sunay UR, Zvanut ME, Marbey J, Hill S, Leach JH, Udwary K.
Sunay UR, et al. Among authors: udwary k.
J Phys Condens Matter. 2019 Aug 28;31(34):345702. doi: 10.1088/1361-648X/ab21ec. Epub 2019 May 16.
J Phys Condens Matter. 2019.
PMID: 31096190
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