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Evaluation of the concentration of point defects in GaN.
Sci Rep. 2017 Aug 24;7(1):9297. doi: 10.1038/s41598-017-08570-1.
Sci Rep. 2017.
PMID: 28839151
Free PMC article.
Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2.
Makkonen I, Korhonen E, Prozheeva V, Tuomisto F.
Makkonen I, et al. Among authors: prozheeva v.
J Phys Condens Matter. 2016 Jun 8;28(22):224002. doi: 10.1088/0953-8984/28/22/224002. Epub 2016 Mar 8.
J Phys Condens Matter. 2016.
PMID: 26952670
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Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites.
Tuomisto F, Prozheeva V, Makkonen I, Myers TH, Bockowski M, Teisseyre H.
Tuomisto F, et al. Among authors: prozheeva v.
Phys Rev Lett. 2017 Nov 10;119(19):196404. doi: 10.1103/PhysRevLett.119.196404. Epub 2017 Nov 9.
Phys Rev Lett. 2017.
PMID: 29219491
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