Pinto N - Search Results

1

Effect of carrier tunneling on the structure of Si nanowires fabricated by metal assisted etching.

Rezvani SJ, Gunnella R, Neilson D, Boarino L, Croin L, Aprile G, Fretto M, Rizzi P, Antonioli D, Pinto N. Rezvani SJ, et al. Among authors: pinto n. Nanotechnology. 2016 Aug 26;27(34):345301. doi: 10.1088/0957-4484/27/34/345301. Epub 2016 Jul 15. Nanotechnology. 2016. PMID: 27420163

2

Diffusion induced effects on geometry of Ge nanowires.

Rezvani SJ, Pinto N, Boarino L, Celegato F, Favre L, Berbezier I. Rezvani SJ, et al. Among authors: pinto n. Nanoscale. 2014 Jul 7;6(13):7469-73. doi: 10.1039/c4nr01084a. Nanoscale. 2014. PMID: 24881677

3

Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x-ray absorption at the Mn K edge.

Gunnella R, Morresi L, Pinto N, Di Cicco A, Ottaviano L, Passacantando M, Verna A, Impellizzeri G, Irrera A, d'Acapito F. Gunnella R, et al. Among authors: pinto n. J Phys Condens Matter. 2010 Jun 2;22(21):216006. doi: 10.1088/0953-8984/22/21/216006. Epub 2010 May 5. J Phys Condens Matter. 2010. PMID: 21393732

4

Structural, electrical, electronic and optical properties of melanin films.

Abbas M, D'Amico F, Morresi L, Pinto N, Ficcadenti M, Natali R, Ottaviano L, Passacantando M, Cuccioloni M, Angeletti M, Gunnella R. Abbas M, et al. Among authors: pinto n. Eur Phys J E Soft Matter. 2009 Mar;28(3):285-91. doi: 10.1140/epje/i2008-10437-9. Epub 2009 Feb 3. Eur Phys J E Soft Matter. 2009. PMID: 19190947

5

X-ray photoelectron-diffraction study of intermixing and morphology at the Ge/Si(001) and Ge/Sb/Si(001) interface.

Gunnella R, Castrucci P, Pinto N, Davoli I I, Sébilleau D, De Crescenzi M. Gunnella R, et al. Among authors: pinto n. Phys Rev B Condens Matter. 1996 Sep 15;54(12):8882-8891. doi: 10.1103/physrevb.54.8882. Phys Rev B Condens Matter. 1996. PMID: 9984569 No abstract available.

6

Interface ordering in Sim/Gen monolayer superlattices: A photoluminescence study.

Casalboni M, Pinto N, Izzi B, Davoli I I, De Crescenzi M, De Matteis F, Prosposito P, Pizzoferrato R. Casalboni M, et al. Among authors: pinto n. Phys Rev B Condens Matter. 1996 Jan 15;53(3):1030-1033. doi: 10.1103/physrevb.53.1030. Phys Rev B Condens Matter. 1996. PMID: 9983547 No abstract available.

7

Strain-driven morphology of Si1-xGex islands grown on Si(100).

Pinto N, Murri R, Rinaldi R, Barucca G. Pinto N, et al. Micron. 2000 Jun;31(3):315-21. doi: 10.1016/s0968-4328(99)00099-2. Micron. 2000. PMID: 10702982

8

Conducting state of polyaniline films: Dependence on moisture.

Pinto NJ, Shah PD, Kahol PK, McCormick BJ. Pinto NJ, et al. Phys Rev B Condens Matter. 1996 Apr 15;53(16):10690-10694. doi: 10.1103/physrevb.53.10690. Phys Rev B Condens Matter. 1996. PMID: 9982634 No abstract available.

9

Deuteron NMR study of dynamics and of coexistence of paraelectric and ferroelectric phases in Rb0.90(ND4)0.10D2AsO4.

Pinto NJ, Howell FL, Schmidt VH. Pinto NJ, et al. Phys Rev B Condens Matter. 1993 Sep 1;48(9):5983-5986. doi: 10.1103/physrevb.48.5983. Phys Rev B Condens Matter. 1993. PMID: 10009132 No abstract available.

10

Magnetic-susceptibility analysis of polyaniline and its derivatives in terms of triplet bipolarons.

Kahol PK, Spencer WR, Pinto NJ, McCormick BJ. Kahol PK, et al. Phys Rev B Condens Matter. 1994 Dec 15;50(24):18647-18650. doi: 10.1103/physrevb.50.18647. Phys Rev B Condens Matter. 1994. PMID: 9976305 No abstract available.

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