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Long-chain amine-templated synthesis of gallium sulfide and gallium selenide nanotubes.
Seral-Ascaso A, Metel S, Pokle A, Backes C, Zhang CJ, Nerl HC, Rode K, Berner NC, Downing C, McEvoy N, Muñoz E, Harvey A, Gholamvand Z, Duesberg GS, Coleman JN, Nicolosi V. Seral-Ascaso A, et al. Among authors: downing c. Nanoscale. 2016 Jun 2;8(22):11698-706. doi: 10.1039/c6nr01663d. Nanoscale. 2016. PMID: 27221399
Scalable production of large quantities of defect-free few-layer graphene by shear exfoliation in liquids.
Paton KR, Varrla E, Backes C, Smith RJ, Khan U, O'Neill A, Boland C, Lotya M, Istrate OM, King P, Higgins T, Barwich S, May P, Puczkarski P, Ahmed I, Moebius M, Pettersson H, Long E, Coelho J, O'Brien SE, McGuire EK, Sanchez BM, Duesberg GS, McEvoy N, Pennycook TJ, Downing C, Crossley A, Nicolosi V, Coleman JN. Paton KR, et al. Among authors: downing c. Nat Mater. 2014 Jun;13(6):624-30. doi: 10.1038/nmat3944. Epub 2014 Apr 20. Nat Mater. 2014. PMID: 24747780 Free article.
Heterojunction hybrid devices from vapor phase grown MoS2.
Yim C, O'Brien M, McEvoy N, Riazimehr S, Schäfer-Eberwein H, Bablich A, Pawar R, Iannaccone G, Downing C, Fiori G, Lemme MC, Duesberg GS. Yim C, et al. Among authors: downing c. Sci Rep. 2014 Jun 26;4:5458. doi: 10.1038/srep05458. Sci Rep. 2014. PMID: 24975741 Free PMC article.
Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.
Jadwiszczak J, O'Callaghan C, Zhou Y, Fox DS, Weitz E, Keane D, Cullen CP, O'Reilly I, Downing C, Shmeliov A, Maguire P, Gough JJ, McGuinness C, Ferreira MS, Bradley AL, Boland JJ, Duesberg GS, Nicolosi V, Zhang H. Jadwiszczak J, et al. Among authors: downing c. Sci Adv. 2018 Mar 2;4(3):eaao5031. doi: 10.1126/sciadv.aao5031. eCollection 2018 Mar. Sci Adv. 2018. PMID: 29511736 Free PMC article.
MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation.
Jadwiszczak J, Keane D, Maguire P, Cullen CP, Zhou Y, Song H, Downing C, Fox D, McEvoy N, Zhu R, Xu J, Duesberg GS, Liao ZM, Boland JJ, Zhang H. Jadwiszczak J, et al. Among authors: downing c. ACS Nano. 2019 Dec 24;13(12):14262-14273. doi: 10.1021/acsnano.9b07421. Epub 2019 Dec 4. ACS Nano. 2019. PMID: 31790198
Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices.
Ippolito S, Kelly AG, Furlan de Oliveira R, Stoeckel MA, Iglesias D, Roy A, Downing C, Bian Z, Lombardi L, Samad YA, Nicolosi V, Ferrari AC, Coleman JN, Samorì P. Ippolito S, et al. Among authors: downing c. Nat Nanotechnol. 2021 May;16(5):592-598. doi: 10.1038/s41565-021-00857-9. Epub 2021 Feb 25. Nat Nanotechnol. 2021. PMID: 33633405
197 results