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GaN nanodiscs embedded in nanowires as optochemical transducers.
Teubert J, Becker P, Furtmayr F, Eickhoff M. Teubert J, et al. Among authors: eickhoff m. Nanotechnology. 2011 Jul 8;22(27):275505. doi: 10.1088/0957-4484/22/27/275505. Epub 2011 May 25. Nanotechnology. 2011. PMID: 21613678
Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis.
de la Mata M, Magen C, Gazquez J, Utama MI, Heiss M, Lopatin S, Furtmayr F, Fernández-Rojas CJ, Peng B, Morante JR, Rurali R, Eickhoff M, Fontcuberta i Morral A, Xiong Q, Arbiol J. de la Mata M, et al. Among authors: eickhoff m. Nano Lett. 2012 May 9;12(5):2579-86. doi: 10.1021/nl300840q. Epub 2012 Apr 17. Nano Lett. 2012. PMID: 22493937
Self-assembled GaN quantum wires on GaN/AlN nanowire templates.
Arbiol J, Magen C, Becker P, Jacopin G, Chernikov A, Schäfer S, Furtmayr F, Tchernycheva M, Rigutti L, Teubert J, Chatterjee S, Morante JR, Eickhoff M. Arbiol J, et al. Among authors: eickhoff m. Nanoscale. 2012 Dec 7;4(23):7517-24. doi: 10.1039/c2nr32173d. Nanoscale. 2012. PMID: 23100169
Electrical transport properties of Ge-doped GaN nanowires.
Schäfer M, Günther M, Länger C, Müßener J, Feneberg M, Uredat P, Elm MT, Hille P, Schörmann J, Teubert J, Henning T, Klar PJ, Eickhoff M. Schäfer M, et al. Among authors: eickhoff m. Nanotechnology. 2015 Mar 27;26(13):135704. doi: 10.1088/0957-4484/26/13/135704. Epub 2015 Mar 11. Nanotechnology. 2015. PMID: 25760310
91 results