Arbiol J - Search Results

1

Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures.

Beeler M, Hille P, Schörmann J, Teubert J, de la Mata M, Arbiol J, Eickhoff M, Monroy E. Beeler M, et al. Among authors: arbiol j. Nano Lett. 2014 Mar 12;14(3):1665-73. doi: 10.1021/nl5002247. Epub 2014 Feb 18. Nano Lett. 2014. PMID: 24502703

2

Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis.

de la Mata M, Magen C, Gazquez J, Utama MI, Heiss M, Lopatin S, Furtmayr F, Fernández-Rojas CJ, Peng B, Morante JR, Rurali R, Eickhoff M, Fontcuberta i Morral A, Xiong Q, Arbiol J. de la Mata M, et al. Among authors: arbiol j. Nano Lett. 2012 May 9;12(5):2579-86. doi: 10.1021/nl300840q. Epub 2012 Apr 17. Nano Lett. 2012. PMID: 22493937

3

Self-assembled GaN nanowires on diamond.

Schuster F, Furtmayr F, Zamani R, Magén C, Morante JR, Arbiol J, Garrido JA, Stutzmann M. Schuster F, et al. Among authors: arbiol j. Nano Lett. 2012 May 9;12(5):2199-204. doi: 10.1021/nl203872q. Epub 2012 Apr 18. Nano Lett. 2012. PMID: 22506554

4

Self-assembled GaN quantum wires on GaN/AlN nanowire templates.

Arbiol J, Magen C, Becker P, Jacopin G, Chernikov A, Schäfer S, Furtmayr F, Tchernycheva M, Rigutti L, Teubert J, Chatterjee S, Morante JR, Eickhoff M. Arbiol J, et al. Nanoscale. 2012 Dec 7;4(23):7517-24. doi: 10.1039/c2nr32173d. Nanoscale. 2012. PMID: 23100169

5

Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt.

Zhang Q, Liu X, Utama MI, Zhang J, de la Mata M, Arbiol J, Lu Y, Sum TC, Xiong Q. Zhang Q, et al. Among authors: arbiol j. Nano Lett. 2012 Dec 12;12(12):6420-7. doi: 10.1021/nl3037867. Epub 2012 Dec 3. Nano Lett. 2012. PMID: 23171235

6

Probing the internal electric field in GaN/AlGaN nanowire heterostructures.

Müssener J, Teubert J, Hille P, Schäfer M, Schörmann J, de la Mata M, Arbiol J, Eickhoff M. Müssener J, et al. Among authors: arbiol j. Nano Lett. 2014 Sep 10;14(9):5118-22. doi: 10.1021/nl501845m. Epub 2014 Aug 20. Nano Lett. 2014. PMID: 25115566

7

Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures.

de la Mata M, Magén C, Caroff P, Arbiol J. de la Mata M, et al. Among authors: arbiol j. Nano Lett. 2014 Nov 12;14(11):6614-20. doi: 10.1021/nl503273j. Epub 2014 Oct 28. Nano Lett. 2014. PMID: 25330094

8

Whispering gallery mode lasing from hexagonal shaped layered lead iodide crystals.

Liu X, Ha ST, Zhang Q, de la Mata M, Magen C, Arbiol J, Sum TC, Xiong Q. Liu X, et al. Among authors: arbiol j. ACS Nano. 2015 Jan 27;9(1):687-95. doi: 10.1021/nn5061207. Epub 2015 Jan 13. ACS Nano. 2015. PMID: 25562110

9

Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy.

Schuster F, Hetzl M, Weiszer S, Garrido JA, de la Mata M, Magen C, Arbiol J, Stutzmann M. Schuster F, et al. Among authors: arbiol j. Nano Lett. 2015 Mar 11;15(3):1773-9. doi: 10.1021/nl504446r. Epub 2015 Feb 3. Nano Lett. 2015. PMID: 25633130 Free article.

10

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga.

Russo-Averchi E, Vukajlovic Plestina J, Tütüncüoglu G, Matteini F, Dalmau-Mallorquí A, de la Mata M, Rüffer D, Potts HA, Arbiol J, Conesa-Boj S, Fontcuberta i Morral A. Russo-Averchi E, et al. Among authors: arbiol j. Nano Lett. 2015 May 13;15(5):2869-74. doi: 10.1021/nl504437v. Epub 2015 Apr 23. Nano Lett. 2015. PMID: 25894762

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