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Excitonic properties of wurtzite InP nanowires grown on silicon substrate.
Nanotechnology. 2013 Jan 25;24(3):035704. doi: 10.1088/0957-4484/24/3/035704. Epub 2012 Dec 21.
Nanotechnology. 2013.
PMID: 23262659
Optical polarization properties of InAs/InP quantum dot and quantum rod nanowires.
Anufriev R, Barakat JB, Patriarche G, Letartre X, Bru-Chevallier C, Harmand JC, Gendry M, Chauvin N.
Anufriev R, et al. Among authors: bru chevallier c.
Nanotechnology. 2015 Oct 2;26(39):395701. doi: 10.1088/0957-4484/26/39/395701. Epub 2015 Sep 9.
Nanotechnology. 2015.
PMID: 26349621
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Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate.
Alouane MH, Anufriev R, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C.
Alouane MH, et al. Among authors: bru chevallier c.
Nanotechnology. 2011 Oct 7;22(40):405702. doi: 10.1088/0957-4484/22/40/405702. Epub 2011 Sep 12.
Nanotechnology. 2011.
PMID: 21911925
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InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.
Bru-Chevallier C, El Akra A, Pelloux-Gervais D, Dumont H, Canut B, Chauvin N, Regreny P, Gendry M, Patriarche G, Jancu JM, Even J, Noe P, Calvo V, Salem B.
Bru-Chevallier C, et al.
J Nanosci Nanotechnol. 2011 Oct;11(10):9153-9. doi: 10.1166/jnn.2011.4282.
J Nanosci Nanotechnol. 2011.
PMID: 22400316
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Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency.
Ezzedini M, Hidouri T, Alouane MHH, Sayari A, Shalaan E, Chauvin N, Sfaxi L, Saidi F, Al-Ghamdi A, Bru-Chevallier C, Maaref H.
Ezzedini M, et al. Among authors: bru chevallier c.
Nanoscale Res Lett. 2017 Dec;12(1):450. doi: 10.1186/s11671-017-2218-2. Epub 2017 Jul 11.
Nanoscale Res Lett. 2017.
PMID: 28697588
Free PMC article.
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