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Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing.
J Nanosci Nanotechnol. 2011 Oct;11(10):9251-5. doi: 10.1166/jnn.2011.4298.
J Nanosci Nanotechnol. 2011.
PMID: 22400332
Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate.
Alouane MH, Anufriev R, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C.
Alouane MH, et al.
Nanotechnology. 2011 Oct 7;22(40):405702. doi: 10.1088/0957-4484/22/40/405702. Epub 2011 Sep 12.
Nanotechnology. 2011.
PMID: 21911925
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Structural and Optical Characteristics of Highly UV-Blue Luminescent ZnNiO Nanoparticles Prepared by Sol-Gel Method.
Farha AH, Al Naim AF, Mazher J, Nasr O, Alouane MHH.
Farha AH, et al. Among authors: alouane mhh.
Materials (Basel). 2020 Feb 15;13(4):879. doi: 10.3390/ma13040879.
Materials (Basel). 2020.
PMID: 32075345
Free PMC article.
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Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency.
Ezzedini M, Hidouri T, Alouane MHH, Sayari A, Shalaan E, Chauvin N, Sfaxi L, Saidi F, Al-Ghamdi A, Bru-Chevallier C, Maaref H.
Ezzedini M, et al. Among authors: alouane mhh.
Nanoscale Res Lett. 2017 Dec;12(1):450. doi: 10.1186/s11671-017-2218-2. Epub 2017 Jul 11.
Nanoscale Res Lett. 2017.
PMID: 28697588
Free PMC article.
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Investigation of the InAs/GaAs Quantum Dots' Size: Dependence on the Strain Reducing Layer's Position.
Souaf M, Baira M, Nasr O, Alouane MHH, Maaref H, Sfaxi L, Ilahi B.
Souaf M, et al. Among authors: alouane mhh.
Materials (Basel). 2015 Jul 24;8(8):4699-4709. doi: 10.3390/ma8084699.
Materials (Basel). 2015.
PMID: 28793465
Free PMC article.
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