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Study of the dielectric properties near the band gap by VEELS: gap measurement in bulk materials.
Ultramicroscopy. 2003 Sep;96(3-4):559-64. doi: 10.1016/S0304-3991(03)00116-5.
Ultramicroscopy. 2003.
PMID: 12871816
Contamination and the quantitative exploitation of EELS low-loss experiments.
Schamm S, Zanchi G.
Schamm S, et al.
Ultramicroscopy. 2001 Aug;88(3):211-7. doi: 10.1016/s0304-3991(01)00070-5.
Ultramicroscopy. 2001.
PMID: 11463199
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Imaging Si nanoparticles embedded in SiO(2) layers by (S)TEM-EELS.
Schamm S, Bonafos C, Coffin H, Cherkashin N, Carrada M, Ben Assayag G, Claverie A, Tencé M, Colliex C.
Schamm S, et al.
Ultramicroscopy. 2008 Mar;108(4):346-57. doi: 10.1016/j.ultramic.2007.05.008. Epub 2007 May 29.
Ultramicroscopy. 2008.
PMID: 17616256
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Temperature-dependent low electric field charging of Si nanocrystals embedded within oxide-nitride-oxide dielectric stacks.
Nikolaou N, Dimitrakis P, Normand P, Schamm S, Bonafos C, Ben Assayag G, Mouti A, Ioannou-Sougleridis V.
Nikolaou N, et al. Among authors: schamm s.
Nanotechnology. 2009 Jul 29;20(30):305704. doi: 10.1088/0957-4484/20/30/305704. Epub 2009 Jul 8.
Nanotechnology. 2009.
PMID: 19584418
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