Formation of bound excitons by photoexcited carriers in p-type GaAs revealed by picosecond luminescence spectroscopy
Phys Rev B Condens Matter
.
1996 Dec 15;54(24):17591-17595.
doi: 10.1103/physrevb.54.17591.
Authors
R Kumar
,
AS Vengurlekar
,
SS Prabhu
,
De Franceschi S
,
F Beltram
PMID:
9985884
DOI:
10.1103/physrevb.54.17591
No abstract available